TY - JOUR
T1 - Fast and accurate programming method for multi-level NAND EEPROMs
AU - Hemink, G. J.
AU - Tanaka, T.
AU - Endoh, T.
AU - Aritome, S.
AU - Shirota, R.
PY - 1995
Y1 - 1995
N2 - For the replacement of conventional harddisks by NAND EEPROMs, a very high density and a high programming speed are required. An increased density can be achieved by using multi-level memory cells. With the new method, using staircase programming pulses combined with a bit-by-bit verify, a very narrow threshold voltage distribution of 0.7V, necessary for 4-level or 2-bit operation, and a high programming speed of 300μs/page or 590ns/byte can be obtained.
AB - For the replacement of conventional harddisks by NAND EEPROMs, a very high density and a high programming speed are required. An increased density can be achieved by using multi-level memory cells. With the new method, using staircase programming pulses combined with a bit-by-bit verify, a very narrow threshold voltage distribution of 0.7V, necessary for 4-level or 2-bit operation, and a high programming speed of 300μs/page or 590ns/byte can be obtained.
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M3 - Conference article
AN - SCOPUS:0029480949
SN - 0743-1562
SP - 129
EP - 130
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - Proceedings of the 1995 Symposium on VLSI Technology
Y2 - 6 June 1995 through 8 June 1995
ER -