Fast growth of carbon nanowalls from pure methane using helicon plasma-enhanced chemical vapor deposition

Genta Sato; Tetsuharu Morio; Toshiaki Kato; Rikizo Hatakeyama

doi:10.1143/JJAP.45.5210

Fast growth of carbon nanowalls from pure methane using helicon plasma-enhanced chemical vapor deposition

Genta Sato, Tetsuharu Morio, Toshiaki Kato, Rikizo Hatakeyama

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Carbon nanowalls (CNWs) are synthesized under pure methane gas (CH ₄) using helicon plasma-enhanced chemical vapor deposition. CH ₄ in the helicon discharge is effectively dissociated to hydrogen atoms and hydrocarbon radicals, resulting in the formation of CNWs on a Ni substrate only from CH₄. CNWs are grown up at a high growth rate of 18μm/h.

Original language	English
Pages (from-to)	5210-5212
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.45.5210
Publication status	Published - 2006

Keywords

Carbon nanowalls
Chemical vapor deposition
Helicon discharge
High speed growth
Reactive plasma

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10.1143/JJAP.45.5210

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abstract = "Carbon nanowalls (CNWs) are synthesized under pure methane gas (CH 4) using helicon plasma-enhanced chemical vapor deposition. CH 4 in the helicon discharge is effectively dissociated to hydrogen atoms and hydrocarbon radicals, resulting in the formation of CNWs on a Ni substrate only from CH4. CNWs are grown up at a high growth rate of 18μm/h.",

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AU - Sato, Genta

AU - Morio, Tetsuharu

AU - Kato, Toshiaki

AU - Hatakeyama, Rikizo

PY - 2006

Y1 - 2006

N2 - Carbon nanowalls (CNWs) are synthesized under pure methane gas (CH 4) using helicon plasma-enhanced chemical vapor deposition. CH 4 in the helicon discharge is effectively dissociated to hydrogen atoms and hydrocarbon radicals, resulting in the formation of CNWs on a Ni substrate only from CH4. CNWs are grown up at a high growth rate of 18μm/h.

AB - Carbon nanowalls (CNWs) are synthesized under pure methane gas (CH 4) using helicon plasma-enhanced chemical vapor deposition. CH 4 in the helicon discharge is effectively dissociated to hydrogen atoms and hydrocarbon radicals, resulting in the formation of CNWs on a Ni substrate only from CH4. CNWs are grown up at a high growth rate of 18μm/h.

KW - Carbon nanowalls

KW - Chemical vapor deposition

KW - Helicon discharge

KW - High speed growth

KW - Reactive plasma

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

Fast growth of carbon nanowalls from pure methane using helicon plasma-enhanced chemical vapor deposition

Abstract

Keywords

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