TY - GEN
T1 - FBAR characteristics with AlN film using MOCVD method and Ru/Ta electrode
AU - Aota, Y.
AU - Tanifuji, S.
AU - Oguma, H.
AU - Kameda, S.
AU - Nakase, H.
AU - Takagi, T.
AU - Tsubouchi, K.
PY - 2007
Y1 - 2007
N2 - Film bulk acoustic resonator (FBAR) was fabricated using high oriented A1N(0002) film obtained through the metal-organic chemical vapor deposition (MOCVD) method. We used the Ru/Ta bottom electrode to improve the FBAR resonant characteristics because Ru has a high acoustic impedance and a hexagonal crystalline that is effective to obtaine the high oriented AlN(0002) film. The Ru/Ta electrode had good characteristics under 1100°C in points of the full width at half maximum (FWHM) of Ru(0002), the surface roughness and the electrode resistivity. The evaluated FWHM of AlN(0002) on Ru/Ta at 1050°C was exellent value of 1.2°. The resonant frequency and anti-resonant frequency of the fabricated FBAR using the Ru/Ta bottom electrode were 5.217GHz and 5.479GHz, respectively. The resistance of the FBAR electrodes and of the series-resonance part in modified Butterworth Van Dyke (MBVD) equivalent circuit were improved to 4.3 Ω from 7.0 Ω and to 0.5 Ω from 3.0 Ω compared to the results of previous Mo bottom electrode, respectively. The effective electro-mechanical coupling coefficient (ke f f 2) of the fabricated FBAR was exellent value of 7.0% and the evaluated Qr was 329. We successfully fabricated the FBAR with the small insertion loss and the large ke f f2 using the Ru/Ta bottom electrode and high oriented AlN(0002) film.
AB - Film bulk acoustic resonator (FBAR) was fabricated using high oriented A1N(0002) film obtained through the metal-organic chemical vapor deposition (MOCVD) method. We used the Ru/Ta bottom electrode to improve the FBAR resonant characteristics because Ru has a high acoustic impedance and a hexagonal crystalline that is effective to obtaine the high oriented AlN(0002) film. The Ru/Ta electrode had good characteristics under 1100°C in points of the full width at half maximum (FWHM) of Ru(0002), the surface roughness and the electrode resistivity. The evaluated FWHM of AlN(0002) on Ru/Ta at 1050°C was exellent value of 1.2°. The resonant frequency and anti-resonant frequency of the fabricated FBAR using the Ru/Ta bottom electrode were 5.217GHz and 5.479GHz, respectively. The resistance of the FBAR electrodes and of the series-resonance part in modified Butterworth Van Dyke (MBVD) equivalent circuit were improved to 4.3 Ω from 7.0 Ω and to 0.5 Ω from 3.0 Ω compared to the results of previous Mo bottom electrode, respectively. The effective electro-mechanical coupling coefficient (ke f f 2) of the fabricated FBAR was exellent value of 7.0% and the evaluated Qr was 329. We successfully fabricated the FBAR with the small insertion loss and the large ke f f2 using the Ru/Ta bottom electrode and high oriented AlN(0002) film.
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U2 - 10.1109/ULTSYM.2007.358
DO - 10.1109/ULTSYM.2007.358
M3 - Conference contribution
AN - SCOPUS:48149086554
SN - 1424413834
SN - 9781424413836
T3 - Proceedings - IEEE Ultrasonics Symposium
SP - 1425
EP - 1428
BT - 2007 IEEE Ultrasonics Symposium Proceedings, IUS
T2 - 2007 IEEE Ultrasonics Symposium, IUS
Y2 - 28 October 2007 through 31 October 2007
ER -