Fermi-level pinning at the metal/p-type CuGaS2 interfaces

M. Sugiyama, R. Nakai, H. Nakanishi, S. F. Chichibu

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8 Citations (Scopus)


The effects of surface treatments and metal species on the performance of ohmic and Schottky contacts to p-type CuGaS2 were discussed. The band diagram of Cu/CuGaS2 Schottky diode was drawn from the results of current-voltage (I-V) and capacitance voltage (C-V) measurements. The furnace temperature of the source and crystallization zones were 800 and 700 °C. The results indicated a surface pinning of the a Fermi level to certain acceptor-type gap states below the midgap.

Original languageEnglish
Pages (from-to)7317-7319
Number of pages3
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2002 Dec 15


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