TY - JOUR
T1 - Fermi-level tuning of the Dirac surface state in (Bi1-xSbx)2Se3 thin films
AU - Satake, Yosuke
AU - Shiogai, Junichi
AU - Takane, Daichi
AU - Yamada, Keiko
AU - Fujiwara, Kohei
AU - Souma, Seigo
AU - Sato, Takafumi
AU - Takahashi, Takashi
AU - Tsukazaki, Atsushi
N1 - Funding Information:
We thank C X Trang, N Shimamura, T Nakamura, and H Oinuma for their assistance with ARPES measurements. This work was partly supported by MEXT of Japan (Innovative Areas ‘Topological Materials Science’, Grant No. JP15H05853, and JP15H02105) and the Program for Key Interdisciplinary Research, Frontier Research Institute for Interdisciplinary Sciences, Tohoku University.
Publisher Copyright:
© 2018 IOP Publishing Ltd.
PY - 2018/2/1
Y1 - 2018/2/1
N2 - We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-xSbx)2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-xSbx)2Se3 film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 x 0.75. These features suggest that Fermi-level tunable (Bi1-xSbx)2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.
AB - We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-xSbx)2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-xSbx)2Se3 film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 x 0.75. These features suggest that Fermi-level tunable (Bi1-xSbx)2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.
KW - angle-resolved photoemission spectroscopy
KW - bismuth selenide
KW - Dirac surface state
KW - electrical transoport
KW - molecular beam epitaxy
KW - topological insulator
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U2 - 10.1088/1361-648X/aaa724
DO - 10.1088/1361-648X/aaa724
M3 - Article
C2 - 29388559
AN - SCOPUS:85041917141
SN - 0953-8984
VL - 30
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 8
M1 - 085501
ER -