TY - JOUR
T1 - Fermi surface and interlayer transport in the two-dimensional magnetic organic conductor (Me-3,5-DIP)[Ni(dmit)2]2
AU - Hazama, K.
AU - Uji, S.
AU - Takahide, Y.
AU - Kimata, M.
AU - Satsukawa, H.
AU - Harada, A.
AU - Terashima, T.
AU - Kosaka, Y.
AU - Yamamoto, H. M.
AU - Kato, R.
PY - 2011/4/29
Y1 - 2011/4/29
N2 - Resistance and magnetic torque measurements at low temperatures under high magnetic fields have been performed for a magnetic organic conductor (Me-3,5-DIP)[Ni(dmit)2]2 to investigate the electronic state. This conductor contains two types of Ni(dmit)2]2 anion layers, layers I and II. Shubnikov-de Haas and angular-dependent magnetoresistance oscillations clearly show that there exists a two-dimensional Fermi surface in layer II, whose spins are strongly coupled with the localized spins in layer I. When the magnetic field is applied parallel to the layers, the interlayer resistance shows a sharp minimum at ∼8 T and then slow oscillation at higher fields. The minimum is explained by the combined effect of the field-dependent magnetic potential and momentum shift in the interlayer tunneling. The mechanism of the slow oscillation is not clarified yet.
AB - Resistance and magnetic torque measurements at low temperatures under high magnetic fields have been performed for a magnetic organic conductor (Me-3,5-DIP)[Ni(dmit)2]2 to investigate the electronic state. This conductor contains two types of Ni(dmit)2]2 anion layers, layers I and II. Shubnikov-de Haas and angular-dependent magnetoresistance oscillations clearly show that there exists a two-dimensional Fermi surface in layer II, whose spins are strongly coupled with the localized spins in layer I. When the magnetic field is applied parallel to the layers, the interlayer resistance shows a sharp minimum at ∼8 T and then slow oscillation at higher fields. The minimum is explained by the combined effect of the field-dependent magnetic potential and momentum shift in the interlayer tunneling. The mechanism of the slow oscillation is not clarified yet.
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U2 - 10.1103/PhysRevB.83.165129
DO - 10.1103/PhysRevB.83.165129
M3 - Article
AN - SCOPUS:79961111760
SN - 1098-0121
VL - 83
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 16
M1 - 165129
ER -