TY - JOUR
T1 - Fermi surface of low carrier compound CeBi
AU - Morita, K.
AU - Goto, T.
AU - Nakamura, S.
AU - Haga, Y.
AU - Suzuki, T.
AU - Kaneta, Y.
AU - Sakai, O.
PY - 1997/2
Y1 - 1997/2
N2 - Fermi surface of low carrier compound CeBi has been investigated by the acoustic dHvA measurement of ultrasonic waves. The Fermi surfaces observed in the ferromagnetic phase of CeBi consist of the hole surfaces β1, β2, β3 and β4 located at Γ point and the electron surfaces α, γ at X points. The angular variation of the dHvA frequencies in CeBi is reproduced by the result of the band calculation based on the p-f mixing effect.
AB - Fermi surface of low carrier compound CeBi has been investigated by the acoustic dHvA measurement of ultrasonic waves. The Fermi surfaces observed in the ferromagnetic phase of CeBi consist of the hole surfaces β1, β2, β3 and β4 located at Γ point and the electron surfaces α, γ at X points. The angular variation of the dHvA frequencies in CeBi is reproduced by the result of the band calculation based on the p-f mixing effect.
KW - CeBi
KW - de Haas-van Alphen effect
KW - Fermi surface
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U2 - 10.1016/S0921-4526(96)00587-X
DO - 10.1016/S0921-4526(96)00587-X
M3 - Article
AN - SCOPUS:0031069226
SN - 0921-4526
VL - 230-232
SP - 192
EP - 194
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -