Abstract
We studied the various kinds of electronic states in the f-electron systems of the cubic RX3 and AnX3 compounds and the tetragonal RTX5 and AnTX5 compounds (R: rare earth, An: Th, U, Np, Pu, T: transition metal, X: Al, Ga, In, Si, Ge, Sn) through the de Haas-van Alphen experiment and the energy band calculation. The former compounds are three dimensional in the electronic states, while the latter compounds are quasi-two dimensional. Pressure experiments were also carried out for antiferromagnets CeIn3 and CeRhIn5 to change the electronic state from the antiferromagnetically ordered state to the non-magnetic state, crossing the critical pressure region where the Néel temperature becomes zero. Around this critical pressure region, d-wave superconductivity is induced, and a marked change of the Fermi surface properties from the 4f-localized state to the 4f-itinerant state occurs at this critical pressure, revealing the first-order phase transition.
Original language | English |
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Pages (from-to) | 1535-1563 |
Number of pages | 29 |
Journal | Journal of Optoelectronics and Advanced Materials |
Volume | 10 |
Issue number | 7 |
Publication status | Published - 2008 Jul |
Keywords
- Actinide compounds
- De haas-van Alphen effect
- Fermi surface
- Rare earth compounds
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering