TY - JOUR
T1 - Fermi surfaces of LaRhSi3 and CeRhSi3
AU - Kimura, N.
AU - Umeda, Y.
AU - Asai, T.
AU - Terashima, T.
AU - Aoki, H.
N1 - Funding Information:
This work is supported by a Grant-in-Aid for Scientific Research on Priority Areas (B) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2001/1
Y1 - 2001/1
N2 - CeRhSi3 has the large electronic specific-heat coefficient γ = 120 mJ/mol K2 and the high Kondo temperature TK approximately 100 K, although its magnetic susceptibility follows the Curie-Weiss law and the specific heat indicates magnetic ordering at 1.8 K. In order to elucidate the 4f-electron nature in CeRhSi3, we have grown single crystals of CeRhSi3 and of its reference material LaRhSi3 and measured the electrical resistivity, the magnetic susceptibility and the de Haas-van Alphen (dHvA) effect. Comparison of the angular dependence of the dHvA frequency in CeRhSi3 to that in LaRhSi3, indicates that the 4f-electrons of CeRhSi3 are itinerant.
AB - CeRhSi3 has the large electronic specific-heat coefficient γ = 120 mJ/mol K2 and the high Kondo temperature TK approximately 100 K, although its magnetic susceptibility follows the Curie-Weiss law and the specific heat indicates magnetic ordering at 1.8 K. In order to elucidate the 4f-electron nature in CeRhSi3, we have grown single crystals of CeRhSi3 and of its reference material LaRhSi3 and measured the electrical resistivity, the magnetic susceptibility and the de Haas-van Alphen (dHvA) effect. Comparison of the angular dependence of the dHvA frequency in CeRhSi3 to that in LaRhSi3, indicates that the 4f-electrons of CeRhSi3 are itinerant.
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U2 - 10.1016/S0921-4526(00)00659-1
DO - 10.1016/S0921-4526(00)00659-1
M3 - Article
AN - SCOPUS:0035059562
SN - 0921-4526
VL - 294-295
SP - 280
EP - 283
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -