Ferroelectric-based functional pass-gate for low-power VLSI

Hiromitsu Kimura; Takahiro Hanyu; Michitaka Kameyama; Yoshikazu Fujimori; Takashi Nakamura; Hidemi Takasu

Ferroelectric-based functional pass-gate for low-power VLSI

Hiromitsu Kimura, Takahiro Hanyu, Michitaka Kameyama, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu

RIEC - Computing System Platforms Division

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottleneck free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a CMOS implementation under 0.6μm ferroelectric/CMOS.

Original language	English
Pages	196-199
Number of pages	4
Publication status	Published - 2002
Event	2002 Symposium on VLSI Circuits Digest of Technical Papers - Honolulu, HI, United States Duration: 2002 Jun 13 → 2002 Jun 15

Conference

Conference	2002 Symposium on VLSI Circuits Digest of Technical Papers
Country/Territory	United States
City	Honolulu, HI
Period	02/6/13 → 02/6/15

Cite this

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title = "Ferroelectric-based functional pass-gate for low-power VLSI",

abstract = "A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottleneck free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a CMOS implementation under 0.6μm ferroelectric/CMOS.",

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AU - Kimura, Hiromitsu

AU - Hanyu, Takahiro

AU - Kameyama, Michitaka

AU - Fujimori, Yoshikazu

AU - Nakamura, Takashi

AU - Takasu, Hidemi

PY - 2002

Y1 - 2002

N2 - A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottleneck free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a CMOS implementation under 0.6μm ferroelectric/CMOS.

AB - A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottleneck free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a CMOS implementation under 0.6μm ferroelectric/CMOS.

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T2 - 2002 Symposium on VLSI Circuits Digest of Technical Papers

Y2 - 13 June 2002 through 15 June 2002

ER -

Ferroelectric-based functional pass-gate for low-power VLSI

Abstract

Conference

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