Ferroelectric-based functional pass-gate for low-power VLSI

Hiromitsu Kimura, Takahiro Hanyu, Michitaka Kameyama, Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


A ferroelectric-based functional pass-gate is proposed for low-power logic-in-memory VLSI which makes communication bottleneck free. Since non-destructive storage and switching functions are merged into a ferroelectric capacitor, active-device counts become small, which reduces the dynamic power dissipation. The use of ferroelectric-based non-volatile storage makes leakage currents cut off. Applying the ferroelectric-based circuitry to binary CAM implementation results in about half dynamic power reduction and 1/22000 static power reduction, compared to a CMOS implementation under 0.6μm ferroelectric/CMOS.

Original languageEnglish
Number of pages4
Publication statusPublished - 2002
Event2002 Symposium on VLSI Circuits Digest of Technical Papers - Honolulu, HI, United States
Duration: 2002 Jun 132002 Jun 15


Conference2002 Symposium on VLSI Circuits Digest of Technical Papers
Country/TerritoryUnited States
CityHonolulu, HI


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