Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi; Hiroyuki Sakurai; Atsuhiko Yamada; Kiyoshi Funaiwa; Kentaro Hirai; Shinichi Urabe; Tetsuya Goto; Masaki Hirayama; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1143/jjap.42.2050

Ferroelectric Sr₂(Ta_1-x, Nb_x)₂O₇ with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa, Kentaro Hirai, Shinichi Urabe, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The compounds of the Sr₂Nb₂O₇ (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr₂(Ta_1-x,Nb_x)₂O₇ (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>10¹² cm^-3) low electron temperature (<1 eV) Kr/O₂ plasma.

Original language	English
Pages (from-to)	2050-2054
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.2050
Publication status	Published - 2003 Apr

Keywords

Ferroelectric thin film
IrO
Low dielectric constant
MFMIS-FET
Oxygen radical treatment
Plasma physical vapor deposition
Sr(Ta,Nb)O (STN)

Access to Document

10.1143/jjap.42.2050

Cite this

@article{60dcb2468d7640359e9624eb431a6319,

title = "Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment",

abstract = "The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>1012 cm-3) low electron temperature (<1 eV) Kr/O2 plasma.",

keywords = "Ferroelectric thin film, IrO, Low dielectric constant, MFMIS-FET, Oxygen radical treatment, Plasma physical vapor deposition, Sr(Ta,Nb)O (STN)",

author = "Ichirou Takahashi and Hiroyuki Sakurai and Atsuhiko Yamada and Kiyoshi Funaiwa and Kentaro Hirai and Shinichi Urabe and Tetsuya Goto and Masaki Hirayama and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2003",

month = apr,

doi = "10.1143/jjap.42.2050",

language = "English",

volume = "42",

pages = "2050--2054",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment

AU - Takahashi, Ichirou

AU - Sakurai, Hiroyuki

AU - Yamada, Atsuhiko

AU - Funaiwa, Kiyoshi

AU - Hirai, Kentaro

AU - Urabe, Shinichi

AU - Goto, Tetsuya

AU - Hirayama, Masaki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2003/4

Y1 - 2003/4

N2 - The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>1012 cm-3) low electron temperature (<1 eV) Kr/O2 plasma.

AB - The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>1012 cm-3) low electron temperature (<1 eV) Kr/O2 plasma.

KW - Ferroelectric thin film

KW - IrO

KW - Low dielectric constant

KW - MFMIS-FET

KW - Oxygen radical treatment

KW - Plasma physical vapor deposition

KW - Sr(Ta,Nb)O (STN)

UR - http://www.scopus.com/inward/record.url?scp=0037672094&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037672094&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.2050

DO - 10.1143/jjap.42.2050

M3 - Article

AN - SCOPUS:0037672094

SN - 0021-4922

VL - 42

SP - 2050

EP - 2054

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

Ferroelectric Sr₂(Ta_1-x, Nb_x)₂O₇ with a low dielectric constant by plasma physical vapor deposition and oxygen radical treatment

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this