Ferroelectric ultra high-density data storage based on scanning nonlinear dielectric microscopy

Yasuo Cho, Sunao Hashimoto, Nozomi Odagawa, Kenkou Tanaka, Yoshiomi Hiranaga

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)


Nano-sized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded to form an smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Sub-nanosecond (500psec) domain switching speed also has been achieved. Next, long term retention characteristic of data with inverted domain dots is investigated by conducting heat treatment test. Obtained life time of inverted dot with the radius of 50nm was 16.9 years at 80°C. Finally, actual information storage with low bit error and high memory density was performed. A bit error ratio of less than 17times;10-4 was achieved at an areal density of 258 Gbit/inch2. Moreover, actual information storage is demonstrated at a density of 1 Tbit/inch2.

Original languageEnglish
Number of pages6
Publication statusPublished - 2006
Event7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States
Duration: 2006 Nov 52006 Nov 8


Conference7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006
Country/TerritoryUnited States
CitySan Mateo, CA


  • Ferroelectric data storage
  • Lithium tantalate
  • Scanning nonlinear dielectric microscopy


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