TY - JOUR
T1 - Ferromagnetic (Ga, Mn)As and its heterostructures
AU - Ohno, H.
AU - Matsukura, F.
AU - Shen, A.
AU - Sugawara, Y.
AU - Akiba, N.
AU - Kuroiwa, T.
N1 - Funding Information:
This work has been partly supported by a Grant-in-Aid for Scientific Research on Priority Area “Spin Controlled Semiconductor Nanostructures” (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan, the “Research for the Future” Program from the Japan Society for the Promotion of Science, and the Mitsubishi Foundation. The early stage of the present work was supported by Japan Science and Technology Corporation under the PRESTO (Sakigake 21) Program.
PY - 1998/7/15
Y1 - 1998/7/15
N2 - Magnetotransport measurements have been performed to clarify the origin of ferromagnetism in a new III-V-based diluted magnetic semiconductor, (Ga, Mn)As. Hall resistance was dominated by the anomalous Hall effect proportional to the magnetization, allowing one to determine the magnetic properties such as Curie temperature and Curie constant as well as the conduction type (p-type) and carrier concentration. Negative resistance above Curie temperature was shown to be well accounted for by the spin disorder scattering, from which the exchange between conduction holes and localized Mn moments was determined. This exchange interaction is shown to be responsible for the observed ferromagnetism in (Ga, Mn)As through the RKKY interaction. The magnetic coupling between two ferromagnetic (Ga, Mn)As films separated by a nonmagnetic (Al, Ga)As layer was controlled by the composition of the intermediary layer, indicating the critical role of the holes in the intermediary layer on the coupling.
AB - Magnetotransport measurements have been performed to clarify the origin of ferromagnetism in a new III-V-based diluted magnetic semiconductor, (Ga, Mn)As. Hall resistance was dominated by the anomalous Hall effect proportional to the magnetization, allowing one to determine the magnetic properties such as Curie temperature and Curie constant as well as the conduction type (p-type) and carrier concentration. Negative resistance above Curie temperature was shown to be well accounted for by the spin disorder scattering, from which the exchange between conduction holes and localized Mn moments was determined. This exchange interaction is shown to be responsible for the observed ferromagnetism in (Ga, Mn)As through the RKKY interaction. The magnetic coupling between two ferromagnetic (Ga, Mn)As films separated by a nonmagnetic (Al, Ga)As layer was controlled by the composition of the intermediary layer, indicating the critical role of the holes in the intermediary layer on the coupling.
KW - (Ga, Mn)As
KW - Ferromagnetism
KW - RKKY interaction
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U2 - 10.1016/S1386-9477(98)00184-2
DO - 10.1016/S1386-9477(98)00184-2
M3 - Article
AN - SCOPUS:0348198798
SN - 1386-9477
VL - 2
SP - 904
EP - 908
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-4
ER -