Ferromagnetic III-V semiconductor: (Ga,Mn)As

H. Ohno, F. Matsukura

Research output: Contribution to journalArticlepeer-review

203 Citations (Scopus)


Magnetic and transport properties of ferromagnetic III-V semiconductor (Ga,Mn)As, an alloy between GaAs and transition element Mn, are reviewed. Results of direct magnetization measurements and magnetic properties obtained from transport are presented and compared. Origin of ferromagnetism and the prospects of magnetic III-V semiconductors are discussed.

Original languageEnglish
Pages (from-to)179-186
Number of pages8
JournalSolid State Communications
Issue number3
Publication statusPublished - 2001 Jan 5


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