Ferromagnetic semiconductor heterostructures for spintronics

Tomasz Dietl, Hideo Ohno, Fumihiro Matsukura

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed.

Original languageEnglish
Pages (from-to)945-954
Number of pages10
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 2007 May


  • (Ga,Mn)As
  • (In,Mn)As
  • Anomalous Hall effect
  • Ferromagnetic semiconductors
  • II-VI compounds
  • III-V compounds
  • Magnetic circular dichroism
  • Magnetic tunneling junctions
  • Magnetization manipulation
  • p-d Zener model


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