An overview is given for the current understanding of the ferromagnetism in manganese-doped III-V compounds together with the description on prototype device structures that allow us to explore a number of new possibilities in spintronics.
|Number of pages||3|
|Journal||Physica B: Condensed Matter|
|Publication status||Published - 2006 Apr 1|
|Event||Proceedings of the 23rd International Conference on Defects in Semiconductors - |
Duration: 2005 Jul 24 → 2005 Jul 29
- III-V semiconductors
- Transition metal doping