TY - JOUR
T1 - Ferromagnetic semiconductors for spintronics
AU - Ohno, Hideo
N1 - Funding Information:
Work supported in part by the IT-Program of RR2002 from MEXT.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - An overview is given for the current understanding of the ferromagnetism in manganese-doped III-V compounds together with the description on prototype device structures that allow us to explore a number of new possibilities in spintronics.
AB - An overview is given for the current understanding of the ferromagnetism in manganese-doped III-V compounds together with the description on prototype device structures that allow us to explore a number of new possibilities in spintronics.
KW - Ferromagnetism
KW - III-V semiconductors
KW - Spintronics
KW - Transition metal doping
UR - http://www.scopus.com/inward/record.url?scp=33645162526&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645162526&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2005.12.007
DO - 10.1016/j.physb.2005.12.007
M3 - Conference article
AN - SCOPUS:33645162526
SN - 0921-4526
VL - 376-377
SP - 19
EP - 21
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
Y2 - 24 July 2005 through 29 July 2005
ER -