Ferromagnetic thin film noise suppressor integrated to on-chip transmission lines

Masahiro Yamaguchi, Sho Muroga, Yasushi Endo, Mitsuru Suzuki, Takayoshi Inagaki, Yoshio Mitsuzuka

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


This paper studies the effects of integrating soft magnetic films to a 0.15 μm rule Silicon-On-Insulator (SOI)-CMOS on-chip microstrip line and coplanar line. In microstrip lines, the intensity of ferromagnetic resonance loss increases with increase in the distance between the magnetic film and ground plane because the magnetic fields from the signal and ground lines are mutually opposite; also, the counter field from the ground current becomes weaker according to distance of the ground plane from the magnetic film. For that reason, it is good to locate the signal line close to the magnetic film and the ground line far away. Furthermore, greater loss occurs with a coplanar line than with microstrip line because both the signal and ground line currents contribute to loss generation.

Original languageEnglish
Article number5467583
Pages (from-to)2450-2453
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number6
Publication statusPublished - 2010 Jun


  • Electromagnetic compatibility (EMC)
  • Electromagnetic noise suppressor
  • Ferromagnetic resonance (FMR) loss
  • Joule loss
  • On-chip transmission line
  • Thin films


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