TY - JOUR
T1 - Ferromagnetism and heterostructures of III-V magnetic semiconductors
AU - Ohno, Hideo
N1 - Funding Information:
I thank F. Matsukura, N. Akiba, T. Omiya, T. Dietl, D. Chiba, Y. Ohno, B. Beschoten, P. Crowell, D.D. Awschalom, and A. Twardowski for valuable discussion. The work at Tohoku University was partly supported by the “Research for the Future” Program (# JSPS-RFTF97P00202) from the Japan Society for the Promotion of Science and partly by Grant-in-Aid on Priority Area “Spin Controlled Semiconductor Nanostructures” (# 09244103) from the Ministry of Education, Japan.
PY - 2000/2
Y1 - 2000/2
N2 - Ferromagnetism in III-V based magnetic semiconductors introduced a new degree of freedom associated with the magnetic cooperative phenomena to the low-dimensional heterostructures. This article reviews the preparation and the structure, magnetic, and transport properties of ferromagnetic III-V semiconductor (Ga,Mn)As, which can be grown pseudomorphically on GaAs, and heterostructures related to the ferromagnetic semiconductor.
AB - Ferromagnetism in III-V based magnetic semiconductors introduced a new degree of freedom associated with the magnetic cooperative phenomena to the low-dimensional heterostructures. This article reviews the preparation and the structure, magnetic, and transport properties of ferromagnetic III-V semiconductor (Ga,Mn)As, which can be grown pseudomorphically on GaAs, and heterostructures related to the ferromagnetic semiconductor.
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U2 - 10.1016/S1386-9477(99)00177-0
DO - 10.1016/S1386-9477(99)00177-0
M3 - Conference article
AN - SCOPUS:0034138559
SN - 1386-9477
VL - 6
SP - 702
EP - 708
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1
T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)
Y2 - 1 August 1999 through 6 August 1999
ER -