Field-effect transistor with deposited graphite thin film

Hiroshi Inokawa, Masao Nagase, Shigeru Hirono, Touichiro Goto, Hiroshi Yamaguchi, Keiichi Torimitsu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


By using a bottom-gate top-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing. On-off current ratios of 2 and 7 were attained at 294 and 150 K, respectively.

Original languageEnglish
Pages (from-to)2615-2617
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2007 Apr 24


  • Electron cyclotron resonance (ECR) sputtering
  • Field-effect transistor (FET)
  • Graphite


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