Field effect transistors based on organic semiconductors and graphene

Katsumi Tanigaki; Susumu Ikeda; Ryo Nouchi; Yan Wang; Fan Xiaoyan; Ryotaro Kumashiro; Nobuhiko Mitoma

Field effect transistors based on organic semiconductors and graphene

Katsumi Tanigaki, Susumu Ikeda, Ryo Nouchi, Yan Wang, Fan Xiaoyan, Ryotaro Kumashiro, Nobuhiko Mitoma

Advanced Institute for Materials Research (AIMR)

Tohoku University

Research output: Contribution to conference › Paper › peer-review

Abstract

Organic semiconductors and graphene are described as new field effect transistors (FETs). Graphene shows high mobility as well as long spin coherent length, because of the mass-less Dirac states and the small spin-orbit coupling, relevant in spintronics. Ambipolar carrier injection can be realized in organic semiconductors useful for future optoelectronics.

Original language	English
Pages	1817-1820
Number of pages	4
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 2010 Dec 1 → 2010 Dec 3

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	10/12/1 → 10/12/3

Cite this

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title = "Field effect transistors based on organic semiconductors and graphene",

abstract = "Organic semiconductors and graphene are described as new field effect transistors (FETs). Graphene shows high mobility as well as long spin coherent length, because of the mass-less Dirac states and the small spin-orbit coupling, relevant in spintronics. Ambipolar carrier injection can be realized in organic semiconductors useful for future optoelectronics.",

author = "Katsumi Tanigaki and Susumu Ikeda and Ryo Nouchi and Yan Wang and Fan Xiaoyan and Ryotaro Kumashiro and Nobuhiko Mitoma",

year = "2010",

language = "English",

pages = "1817--1820",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

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TY - CONF

T1 - Field effect transistors based on organic semiconductors and graphene

AU - Tanigaki, Katsumi

AU - Ikeda, Susumu

AU - Nouchi, Ryo

AU - Wang, Yan

AU - Xiaoyan, Fan

AU - Kumashiro, Ryotaro

AU - Mitoma, Nobuhiko

PY - 2010

Y1 - 2010

N2 - Organic semiconductors and graphene are described as new field effect transistors (FETs). Graphene shows high mobility as well as long spin coherent length, because of the mass-less Dirac states and the small spin-orbit coupling, relevant in spintronics. Ambipolar carrier injection can be realized in organic semiconductors useful for future optoelectronics.

AB - Organic semiconductors and graphene are described as new field effect transistors (FETs). Graphene shows high mobility as well as long spin coherent length, because of the mass-less Dirac states and the small spin-orbit coupling, relevant in spintronics. Ambipolar carrier injection can be realized in organic semiconductors useful for future optoelectronics.

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UR - http://www.scopus.com/inward/citedby.url?scp=79956321734&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956321734

SP - 1817

EP - 1820

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Field effect transistors based on organic semiconductors and graphene

Abstract

Conference

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