TY - JOUR
T1 - Field effect transistors for terahertz detection and emission
AU - Knap, Wojciech
AU - Nadar, Salman
AU - Videlier, Hadley
AU - Boubanga-Tombet, Stephane
AU - Coquillat, Dominique
AU - Dyakonova, Nina
AU - Teppe, Frederic
AU - Karpierz, Kristoph
AU - Łusakowski, Jerzy
AU - Sakowicz, MacIej
AU - Kasalynas, Irmantas
AU - Seliuta, Dalius
AU - Valusis, Gintaras
AU - Otsuji, Taiichi
AU - Meziani, Yahya
AU - El Fatimy, Abdel
AU - Vandenbrouk, Simon
AU - Madjour, Kamel
AU - Théron, Didier
AU - Gaquière, Christophe
N1 - Funding Information:
Acknowledgments We thank M. Dyakonov for help in experiments and interpretation of the results that are reported in this review. This work was supported by CNRS through the ANR project TeraGaN and the GDR-E project “Semiconductor sources and detectors of terahertz frequencies”. We acknowledge the Region of Languedoc-Roussillon through the “Terahertz Platform” project and the European Union Grant No. MTKD-CT-2005-029671. This work has been supported also by PHC SAKURA “Research and Development of Terahertz Plasma-wave Transistors”. The work at the Tohoku University was supported by the SCOPE Program from the MIC, Japan, and by the Grant in Aid for Basic Research (S) from the JSPS, Japan. Y.M.M acknowledges the support from the MICINN-PPT120000-2009-4 and Ramon Y Cajal program in Spain.
PY - 2011/5
Y1 - 2011/5
N2 - Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the Terahertz (THz) range. Nonlinear properties of the plasma/electron gas in the transistor channel can be used for the rectification and detection of THz radiation. The excitation of plasma waves by sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature plasma oscillations are usually overdamped, but the FETs can still operate as efficient broadband rectifiers/detectors in the THz range. We present a few recent experimental results on THz detection by FETs showing some new ways of improvement of FETs for THz imaging at room temperature as well as the new physical phenomena like detection in quantizing magnetic fields. We also demonstrate THz emission properties of GaN based FETs.
AB - Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the Terahertz (THz) range. Nonlinear properties of the plasma/electron gas in the transistor channel can be used for the rectification and detection of THz radiation. The excitation of plasma waves by sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature plasma oscillations are usually overdamped, but the FETs can still operate as efficient broadband rectifiers/detectors in the THz range. We present a few recent experimental results on THz detection by FETs showing some new ways of improvement of FETs for THz imaging at room temperature as well as the new physical phenomena like detection in quantizing magnetic fields. We also demonstrate THz emission properties of GaN based FETs.
KW - Field-effect transistors
KW - Imaging
KW - Plasma waves
KW - TeraHertz detectors
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U2 - 10.1007/s10762-010-9647-7
DO - 10.1007/s10762-010-9647-7
M3 - Article
AN - SCOPUS:79958239895
SN - 1866-6892
VL - 32
SP - 618
EP - 628
JO - Journal of Infrared, Millimeter, and Terahertz Waves
JF - Journal of Infrared, Millimeter, and Terahertz Waves
IS - 5
ER -