Field effect transistors for terahertz detection: Physics and first imaging applications

Wojciech Knap, Mikhail Dyakonov, Dominique Coquillat, Frederic Teppe, Nina Dyakonova, Jerzy Łusakowski, Krzysztof Karpierz, MacIej Sakowicz, Gintaras Valusis, Dalius Seliuta, Irmantas Kasalynas, Abdelouahad El Fatimy, Y. M. Meziani, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

327 Citations (Scopus)


Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.

Original languageEnglish
Pages (from-to)1319-1337
Number of pages19
JournalJournal of Infrared, Millimeter, and Terahertz Waves
Issue number12
Publication statusPublished - 2009


  • Field-effect transistors
  • Imaging
  • Plasma waves
  • THz detectors

ASJC Scopus subject areas

  • Radiation
  • Instrumentation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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