TY - JOUR
T1 - Field effect transistors for terahertz detection
T2 - Physics and first imaging applications
AU - Knap, Wojciech
AU - Dyakonov, Mikhail
AU - Coquillat, Dominique
AU - Teppe, Frederic
AU - Dyakonova, Nina
AU - Łusakowski, Jerzy
AU - Karpierz, Krzysztof
AU - Sakowicz, MacIej
AU - Valusis, Gintaras
AU - Seliuta, Dalius
AU - Kasalynas, Irmantas
AU - El Fatimy, Abdelouahad
AU - Meziani, Y. M.
AU - Otsuji, Taiichi
N1 - Funding Information:
Acknowledgements We thank prof. T. Skotnicki (ST Microelectronics) for providing the Silicon FETs, prof. A. Cappy and prof. S. Bollaert (IEMN, Lille) for providing InGaAs HEMTs. We thank also dr. P. Mounaix and dr. E. Abraham (LPMOH CNRS and Bordeaux I University) for their experimental support in the time domain spectroscopy. This work was financially supported in part by JSPS International Fellowship Program for Research in Japan, by the joint French-Lithuanian research program “Gilibert/EGIDE.”, and by the joint French-Japanese research program “Sakura/EGIDE.”. JŁ, WK and KK acknowledge the support of 162/THz/2006/02 and MTKD-CT-2005-029671 grants. The authors from the Montpellier University acknowledge the CNRS guiding GDR and GDR-E projects “Semiconductor sources and detectors of THz frequencies” and the Region of Languedoc-Roussillon through the “Terahertz Platform” project, as well as ANR TeraGaN project. Experiments at Vilnius were conducted under the project “Terahertz optoelectronics: devices and applications” (No. 179 J).
PY - 2009
Y1 - 2009
N2 - Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
AB - Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
KW - Field-effect transistors
KW - Imaging
KW - Plasma waves
KW - THz detectors
UR - http://www.scopus.com/inward/record.url?scp=70349611805&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349611805&partnerID=8YFLogxK
U2 - 10.1007/s10762-009-9564-9
DO - 10.1007/s10762-009-9564-9
M3 - Article
AN - SCOPUS:70349611805
SN - 1866-6892
VL - 30
SP - 1319
EP - 1337
JO - Journal of Infrared, Millimeter, and Terahertz Waves
JF - Journal of Infrared, Millimeter, and Terahertz Waves
IS - 12
ER -