Abstract
A sample for field-emission (FE) measurements was fabricated by first seeding high-pressure synthetic diamond particles (DPs) over a high-conductivity n-type Si(001) wafer and then growing nondoped diamond layers onto the DP surfaces by chemical vapor deposition. We have characterized several important features of this sample using field emission spectroscopy (FES) and field emission microscopy (FEM). FES measurements showed that a FES peak starts at the substrate Fermi level and decreases in kinetic energy along with an increase in the peak width as the electric field is increased. FEM measurements showed that there are "hot spots" that strongly field-emit electrons. A plausible model of FE for isolated DPs on a silicon substrate is proposed in which the key factor responsible for FE is a resistive interface between the DP and the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 299-306 |
| Number of pages | 8 |
| Journal | New Diamond and Frontier Carbon Technology |
| Volume | 11 |
| Issue number | 5 |
| Publication status | Published - 2001 |
Keywords
- Chemical vapor deposition (CVD)
- Diamond
- Field emission microscopy
- Field-emission spectroscopy
- Silicon