Field-induced resistance switching at metal/perovskite manganese oxide interface

I. Ohkubo, K. Tsubouchi, T. Harada, H. Kumigashira, K. Itaka, Y. Matsumoto, T. Ohnishi, M. Lippmaa, H. Koinuma, M. Oshima

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Planar type metal/insulator/metal structures composed of an epitaxial perovskite manganese oxide layer and various metal electrodes were prepared for electric-field-induced resistance switching. Only the electrode pairs including Al show good resistance switching and the switching ratio reaches its maximum of 1000. This resistance switching occurs around the interface between Al electrodes and epitaxial perovskite manganese oxide thin films.

Original languageEnglish
Pages (from-to)13-15
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 2008 Feb 25


  • Epitaxy of thin films
  • Metal-insulator-metal structures
  • Oxides


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