Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility

Y. X. Liu; T. Matsukawa; K. Endo; M. Masahrara; S. O'uchi; H. Yamauchi; K. Ishii; J. Tsukada; Y. Ishikawa; K. Sakamoto; E. Suzuki

doi:10.1016/j.mee.2007.04.080

Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility

Y. X. Liu, T. Matsukawa, K. Endo, M. Masahrara, S. O'uchi, H. Yamauchi, K. Ishii, J. Tsukada, Y. Ishikawa, K. Sakamoto, E. Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This paper presents the fin-height controlled TiN-gate FinFET CMOS technology based on the experimental carrier mobility data. The good current matching by tuning the N-channel fin-height and the excellent transfer performance in the fabricated TiN-gate CMOS inverter are demonstrated. The developed technologies are attractive to materialize the high-performance FinFET CMOS circuits.

Original language	English
Pages (from-to)	2101-2104
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.080
Publication status	Published - 2007 Sept

Keywords

Current matching
Fin-height control
FinFET
Mobility
Orientation-dependent wet etching
TiN-gate

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10.1016/j.mee.2007.04.080

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title = "Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility",

abstract = "This paper presents the fin-height controlled TiN-gate FinFET CMOS technology based on the experimental carrier mobility data. The good current matching by tuning the N-channel fin-height and the excellent transfer performance in the fabricated TiN-gate CMOS inverter are demonstrated. The developed technologies are attractive to materialize the high-performance FinFET CMOS circuits.",

keywords = "Current matching, Fin-height control, FinFET, Mobility, Orientation-dependent wet etching, TiN-gate",

author = "Liu, {Y. X.} and T. Matsukawa and K. Endo and M. Masahrara and S. O'uchi and H. Yamauchi and K. Ishii and J. Tsukada and Y. Ishikawa and K. Sakamoto and E. Suzuki",

year = "2007",

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doi = "10.1016/j.mee.2007.04.080",

language = "English",

volume = "84",

pages = "2101--2104",

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T1 - Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility

AU - Liu, Y. X.

AU - Matsukawa, T.

AU - Endo, K.

AU - Masahrara, M.

AU - O'uchi, S.

AU - Yamauchi, H.

AU - Ishii, K.

AU - Tsukada, J.

AU - Ishikawa, Y.

AU - Sakamoto, K.

AU - Suzuki, E.

PY - 2007/9

Y1 - 2007/9

N2 - This paper presents the fin-height controlled TiN-gate FinFET CMOS technology based on the experimental carrier mobility data. The good current matching by tuning the N-channel fin-height and the excellent transfer performance in the fabricated TiN-gate CMOS inverter are demonstrated. The developed technologies are attractive to materialize the high-performance FinFET CMOS circuits.

AB - This paper presents the fin-height controlled TiN-gate FinFET CMOS technology based on the experimental carrier mobility data. The good current matching by tuning the N-channel fin-height and the excellent transfer performance in the fabricated TiN-gate CMOS inverter are demonstrated. The developed technologies are attractive to materialize the high-performance FinFET CMOS circuits.

KW - Current matching

KW - Fin-height control

KW - FinFET

KW - Mobility

KW - Orientation-dependent wet etching

KW - TiN-gate

UR - http://www.scopus.com/inward/record.url?scp=34248643162&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248643162&partnerID=8YFLogxK

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M3 - Article

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SN - 0167-9317

VL - 84

SP - 2101

EP - 2104

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9-10

ER -

Fin-height controlled TiN-gate FinFET CMOS based on experimental mobility

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Keywords

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