First-principles study of excess Si-atom stability around Si-oxide/Si interfaces

Hiroyuki Kageshima; Masashi Uematsu; Kazuto Akagi; Shinji Tsuneyuki; Toru Akiyama; Kenji Shiraishi

doi:10.1063/1.1994149

First-principles study of excess Si-atom stability around Si-oxide/Si interfaces

Hiroyuki Kageshima, Masashi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The stability of excess Si around the Si-oxide/Si interfaces is studied using the first-principles calculation. The excess Si is suggested to flow into the oxide from the substrate. The excess Si flowing into the oxide becomes SiO interstitials with the O-vacancy-like structure, which can be one of the sources of the E'-centers or the charge traps in the oxide. This Si flow is expected to be rather easier because SiO interstitials can be created via a simple rebonding procedure in the oxide.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	389-390
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994149
Publication status	Published - 2005 Jun 30
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 2004 Jul 26 → 2004 Jul 30

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	04/7/26 → 04/7/30

Access to Document

10.1063/1.1994149

Cite this

@inproceedings{0f697d174fb94faeba4b60dfb5b8b065,

title = "First-principles study of excess Si-atom stability around Si-oxide/Si interfaces",

abstract = "The stability of excess Si around the Si-oxide/Si interfaces is studied using the first-principles calculation. The excess Si is suggested to flow into the oxide from the substrate. The excess Si flowing into the oxide becomes SiO interstitials with the O-vacancy-like structure, which can be one of the sources of the E'-centers or the charge traps in the oxide. This Si flow is expected to be rather easier because SiO interstitials can be created via a simple rebonding procedure in the oxide.",

author = "Hiroyuki Kageshima and Masashi Uematsu and Kazuto Akagi and Shinji Tsuneyuki and Toru Akiyama and Kenji Shiraishi",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994149",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "389--390",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Kageshima, H, Uematsu, M, Akagi, K, Tsuneyuki, S, Akiyama, T & Shiraishi, K 2005, First-principles study of excess Si-atom stability around Si-oxide/Si interfaces. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 389-390, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04/7/26. https://doi.org/10.1063/1.1994149

First-principles study of excess Si-atom stability around Si-oxide/Si interfaces. / Kageshima, Hiroyuki; Uematsu, Masashi; Akagi, Kazuto et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 389-390 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - First-principles study of excess Si-atom stability around Si-oxide/Si interfaces

AU - Kageshima, Hiroyuki

AU - Uematsu, Masashi

AU - Akagi, Kazuto

AU - Tsuneyuki, Shinji

AU - Akiyama, Toru

AU - Shiraishi, Kenji

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The stability of excess Si around the Si-oxide/Si interfaces is studied using the first-principles calculation. The excess Si is suggested to flow into the oxide from the substrate. The excess Si flowing into the oxide becomes SiO interstitials with the O-vacancy-like structure, which can be one of the sources of the E'-centers or the charge traps in the oxide. This Si flow is expected to be rather easier because SiO interstitials can be created via a simple rebonding procedure in the oxide.

AB - The stability of excess Si around the Si-oxide/Si interfaces is studied using the first-principles calculation. The excess Si is suggested to flow into the oxide from the substrate. The excess Si flowing into the oxide becomes SiO interstitials with the O-vacancy-like structure, which can be one of the sources of the E'-centers or the charge traps in the oxide. This Si flow is expected to be rather easier because SiO interstitials can be created via a simple rebonding procedure in the oxide.

UR - http://www.scopus.com/inward/record.url?scp=33749479408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749479408&partnerID=8YFLogxK

U2 - 10.1063/1.1994149

DO - 10.1063/1.1994149

M3 - Conference contribution

AN - SCOPUS:33749479408

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 389

EP - 390

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

First-principles study of excess Si-atom stability around Si-oxide/Si interfaces

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this