In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (VBG)-drain current (ID) characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study.
|Number of pages||5|
|Journal||Applied Surface Science|
|Publication status||Published - 2000 Aug 1|
|Event||5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France|
Duration: 1999 Jul 6 → 1999 Jul 9