Flat-band voltage control of a back-gate MOSFET by single ion implantation

Takahiro Shinada, Atsuki Ishikawa, Chie Hinoshita, Meishoku Koh, Iwao Ohdomari

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)


In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (VBG)-drain current (ID) characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study.

Original languageEnglish
Pages (from-to)499-503
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9


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