Flattening technique of (551) silicon surface using Xe/H2 plasma

Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


In order to flatten Si(551) surface the thermal annealing in Ar ambience at the atmospheric pressure was performed. The surface roughness of Si(551) is very flat after annealing at 600 °C. It is considered that Si atoms on Si(551) surface easily migrate at lower temperature than Si(100). However because the very roughened spot are locally appeared, the atomically flat silicon surface cannot be obtained on Si(551) yet. Xe/H2 plasma process is also performed at low temperature less than 600 °C At the H2 concentration of 10 % and at the process pressure of 266 Pa, Ra of Si(551) surface has a very flat value of 0.068 nm. It is considered that the surface migration of Si atoms on Si(551) surface increasingly progresses because Si(551) surface became activated by Xe/H2 plasma.

Original languageEnglish
Pages (from-to)401-407
Number of pages7
JournalECS Transactions
Issue number2
Publication statusPublished - 2014
Event6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15


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