Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology

Shin ichi O'uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We propose a flex-pass-gate SRAM (Flex-PG SRAM), which is a FinFET-based SRAM to enhance both the read and write margins independently. The flip-flop in the Flex-PG SRAM consists of usual FinFETs, while its pass gates consist of double-"independent"-gate FinFETs, i.e., "four-terminal"- (4T-) FinFETs. A 4T-FinFET has a variable threshold voltage controlled by the second gate voltage. This function enables the Flex-PG SRAM to optimize the current drivability in the pass gates according to operational conditions of read and write. This results in enhancement of both the read and write margins. TCAD simulations revealed that the Flex-PG SRAM increases the read margin by 71 mV without the cell size penalty and decrease in the write margin, even when its 6σ tolerance is ensured. Also, a half-cell experiment proved its feasibility.

Original languageEnglish
Pages (from-to)1694-1702
Number of pages9
JournalSolid-State Electronics
Issue number11
Publication statusPublished - 2008 Nov


  • Double-independent-gate FinFET
  • Monte Carlo simulation
  • Random variation
  • Read margin
  • SRAM cell
  • Write margin


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