Flexible low-voltage organic thin-film transistors and circuits based on C 10-DNTT

Ute Zschieschang, Myeong Jin Kang, Kazuo Takimiya, Tsuyoshi Sekitani, Takao Someya, Tobias W. Canzler, Ansgar Werner, Jan Blochwitz-Nimoth, Hagen Klauk

Research output: Contribution to journalArticlepeer-review

100 Citations (Scopus)


Using the recently developed organic semiconductor, 2,9-didecyldinaphtho[2, 3-b:2′,3′-f]thieno[3,2-b]thiophene (C 10-DNTT), we have fabricated organic thin-film transistors and ring oscillators on flexible polymeric substrates. By utilizing a gate dielectric with a small thickness (5.3 nm) and a large capacitance (800 nF cm -2), the transistors can be operated with relatively low voltages of about 2 to 3 V. To improve the charge exchange between the organic semiconductor and the gold source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) was inserted between the C 10-DNTT and the gold contacts. The optimized transistors have a field-effect mobility of 4.3 cm 2 V -1 s -1, an on/off current ratio of 10 8, and a subthreshold swing of 68 mV per decade. The ring oscillators have a signal propagation delay of 5 μs per stage at a supply voltage of 3 V, making these the fastest organic circuits at supply voltages below 7 V reported to date.

Original languageEnglish
Pages (from-to)4273-4277
Number of pages5
JournalJournal of Materials Chemistry
Issue number10
Publication statusPublished - 2012 Mar 14


Dive into the research topics of 'Flexible low-voltage organic thin-film transistors and circuits based on C 10-DNTT'. Together they form a unique fingerprint.

Cite this