Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability

Flexible transistore and circuits based on dinaphtho-[2,3-b:2′, 3′-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm² V^-1 s^-1 and the ring oscillators have a stage delay of 18 μs. Due to stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air. (Figure Presented)