Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX

K. Endo, S. Migita, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)


For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.

Original languageEnglish
Title of host publication2012 IEEE International SOI Conference, SOI 2012
Publication statusPublished - 2012
Event2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States
Duration: 2012 Oct 12012 Oct 4

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X


Conference2012 IEEE International SOI Conference, SOI 2012
Country/TerritoryUnited States
CityNapa, CA

Cite this