For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.
|Title of host publication||2012 IEEE International SOI Conference, SOI 2012|
|Publication status||Published - 2012|
|Event||2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States|
Duration: 2012 Oct 1 → 2012 Oct 4
|Name||Proceedings - IEEE International SOI Conference|
|Conference||2012 IEEE International SOI Conference, SOI 2012|
|Period||12/10/1 → 12/10/4|