Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX

K. Endo; S. Migita; Y. Ishikawa; Y. Liu; T. Matsukawa; S. O'Uchi; J. Tsukada; W. Mizubayashi; Y. Morita; H. Ota; H. Yamauchi; M. Masahara

doi:10.1109/SOI.2012.6404371

Flexible V_th FinFETs with 9-nm-thick extremely-thin BOX

K. Endo, S. Migita, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

For the first time, we have successfully fabricated the V_th controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the V_th of the FinFET on the ETBOX is flexibly tuned from low V_th to high V_th with keeping low sub-threshold slope.

Original language	English
Title of host publication	2012 IEEE International SOI Conference, SOI 2012
DOIs	https://doi.org/10.1109/SOI.2012.6404371
Publication status	Published - 2012
Event	2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States Duration: 2012 Oct 1 → 2012 Oct 4

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2012 IEEE International SOI Conference, SOI 2012
Country/Territory	United States
City	Napa, CA
Period	12/10/1 → 12/10/4

Access to Document

10.1109/SOI.2012.6404371

Cite this

Endo, K., Migita, S., Ishikawa, Y., Liu, Y., Matsukawa, T., O'Uchi, S., Tsukada, J., Mizubayashi, W., Morita, Y., Ota, H., Yamauchi, H., & Masahara, M. (2012). Flexible V_th FinFETs with 9-nm-thick extremely-thin BOX. In 2012 IEEE International SOI Conference, SOI 2012 Article 6404371 (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2012.6404371

@inproceedings{c7d8bc91c7784408b5c0310370993b3f,

title = "Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX",

abstract = "For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.",

author = "K. Endo and S. Migita and Y. Ishikawa and Y. Liu and T. Matsukawa and S. O'Uchi and J. Tsukada and W. Mizubayashi and Y. Morita and H. Ota and H. Yamauchi and M. Masahara",

year = "2012",

doi = "10.1109/SOI.2012.6404371",

language = "English",

isbn = "9781467326919",

series = "Proceedings - IEEE International SOI Conference",

booktitle = "2012 IEEE International SOI Conference, SOI 2012",

note = "2012 IEEE International SOI Conference, SOI 2012 ; Conference date: 01-10-2012 Through 04-10-2012",

}

Endo, K, Migita, S, Ishikawa, Y, Liu, Y, Matsukawa, T, O'Uchi, S, Tsukada, J, Mizubayashi, W, Morita, Y, Ota, H, Yamauchi, H & Masahara, M 2012, Flexible V_th FinFETs with 9-nm-thick extremely-thin BOX. in 2012 IEEE International SOI Conference, SOI 2012., 6404371, Proceedings - IEEE International SOI Conference, 2012 IEEE International SOI Conference, SOI 2012, Napa, CA, United States, 12/10/1. https://doi.org/10.1109/SOI.2012.6404371

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T1 - Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX

AU - Endo, K.

AU - Migita, S.

AU - Ishikawa, Y.

AU - Liu, Y.

AU - Matsukawa, T.

AU - O'Uchi, S.

AU - Tsukada, J.

AU - Mizubayashi, W.

AU - Morita, Y.

AU - Ota, H.

AU - Yamauchi, H.

AU - Masahara, M.

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AB - For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.

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T2 - 2012 IEEE International SOI Conference, SOI 2012

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