Flip-chip assembled 60GHz CMOS receiver front-end

M. Tsuru; T. Tanaka; R. Inagaki; E. Taniguchi; M. Nakayama; S. Kameda; N. Suematsu; T. Takagi; K. Tsubouchi

doi:10.1109/IMWS2.2012.6338241

Flip-chip assembled 60GHz CMOS receiver front-end

M. Tsuru, T. Tanaka, R. Inagaki, E. Taniguchi, M. Nakayama, S. Kameda, N. Suematsu, T. Takagi, K. Tsubouchi

RIEC - Information Communication Platforms Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

This paper presents an flip-chip assembled 60GHz CMOS receiver front-end. The receiver front-end consists of a cascode LNA, a balun, a harmonic mixer, and an IF amplifier fabricated by 90nm CMOS. The flip-chip assembled cascode LNA performs 31.1dB gain as well as on-wafer probing with NF of 5.8dB and output P_1dB of -3.9dBm at 60GHz while consuming 26.9mW. The flip-chip assembled receiver front-end performs 21.3dB of conversion gain.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
Pages	169-172
Number of pages	4
DOIs	https://doi.org/10.1109/IMWS2.2012.6338241
Publication status	Published - 2012
Event	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Nanjing, China Duration: 2012 Sept 18 → 2012 Sept 20

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

Conference

Conference	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012
Country/Territory	China
City	Nanjing
Period	12/9/18 → 12/9/20

Keywords

CMOS
Flip-chip
Front-end
Millimeter-Wave
Receiver

Access to Document

10.1109/IMWS2.2012.6338241

Cite this

Tsuru, M., Tanaka, T., Inagaki, R., Taniguchi, E., Nakayama, M., Kameda, S., Suematsu, N., Takagi, T., & Tsubouchi, K. (2012). Flip-chip assembled 60GHz CMOS receiver front-end. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding (pp. 169-172). Article 6338241 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). https://doi.org/10.1109/IMWS2.2012.6338241

Tsuru, M. ; Tanaka, T. ; Inagaki, R. et al. / Flip-chip assembled 60GHz CMOS receiver front-end. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. pp. 169-172 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

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title = "Flip-chip assembled 60GHz CMOS receiver front-end",

abstract = "This paper presents an flip-chip assembled 60GHz CMOS receiver front-end. The receiver front-end consists of a cascode LNA, a balun, a harmonic mixer, and an IF amplifier fabricated by 90nm CMOS. The flip-chip assembled cascode LNA performs 31.1dB gain as well as on-wafer probing with NF of 5.8dB and output P1dB of -3.9dBm at 60GHz while consuming 26.9mW. The flip-chip assembled receiver front-end performs 21.3dB of conversion gain.",

keywords = "CMOS, Flip-chip, Front-end, Millimeter-Wave, Receiver",

author = "M. Tsuru and T. Tanaka and R. Inagaki and E. Taniguchi and M. Nakayama and S. Kameda and N. Suematsu and T. Takagi and K. Tsubouchi",

year = "2012",

doi = "10.1109/IMWS2.2012.6338241",

language = "English",

isbn = "9781467309028",

series = "IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding",

pages = "169--172",

booktitle = "IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding",

note = "2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 ; Conference date: 18-09-2012 Through 20-09-2012",

}

Tsuru, M, Tanaka, T, Inagaki, R, Taniguchi, E, Nakayama, M, Kameda, S, Suematsu, N, Takagi, T & Tsubouchi, K 2012, Flip-chip assembled 60GHz CMOS receiver front-end. in IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding., 6338241, IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding, pp. 169-172, 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012, Nanjing, China, 12/9/18. https://doi.org/10.1109/IMWS2.2012.6338241

Flip-chip assembled 60GHz CMOS receiver front-end. / Tsuru, M.; Tanaka, T.; Inagaki, R. et al.
IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 169-172 6338241 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Flip-chip assembled 60GHz CMOS receiver front-end

AU - Tsuru, M.

AU - Tanaka, T.

AU - Inagaki, R.

AU - Taniguchi, E.

AU - Nakayama, M.

AU - Kameda, S.

AU - Suematsu, N.

AU - Takagi, T.

AU - Tsubouchi, K.

PY - 2012

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N2 - This paper presents an flip-chip assembled 60GHz CMOS receiver front-end. The receiver front-end consists of a cascode LNA, a balun, a harmonic mixer, and an IF amplifier fabricated by 90nm CMOS. The flip-chip assembled cascode LNA performs 31.1dB gain as well as on-wafer probing with NF of 5.8dB and output P1dB of -3.9dBm at 60GHz while consuming 26.9mW. The flip-chip assembled receiver front-end performs 21.3dB of conversion gain.

AB - This paper presents an flip-chip assembled 60GHz CMOS receiver front-end. The receiver front-end consists of a cascode LNA, a balun, a harmonic mixer, and an IF amplifier fabricated by 90nm CMOS. The flip-chip assembled cascode LNA performs 31.1dB gain as well as on-wafer probing with NF of 5.8dB and output P1dB of -3.9dBm at 60GHz while consuming 26.9mW. The flip-chip assembled receiver front-end performs 21.3dB of conversion gain.

KW - CMOS

KW - Flip-chip

KW - Front-end

KW - Millimeter-Wave

KW - Receiver

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BT - IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

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Tsuru M, Tanaka T, Inagaki R, Taniguchi E, Nakayama M, Kameda S et al. Flip-chip assembled 60GHz CMOS receiver front-end. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 169-172. 6338241. (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). doi: 10.1109/IMWS2.2012.6338241

Flip-chip assembled 60GHz CMOS receiver front-end

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