TY - GEN
T1 - Floating gate B4-flash memory technology utilizing novel programming scheme - Highly scalable, efficient and temperature independent programming
AU - Shukuri, S.
AU - Ajika, N.
AU - Mihara, M.
AU - Kawajiri, Y.
AU - Ogura, T.
AU - Kobayashi, K.
AU - Endoh, T.
AU - Nakashima, M.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - A floating gate B4-flash memory cell technology, which provides high speed programming with excellent programming efficiency for NOR architecture, has been developed. We have reported a pchannel SONOS type B4-flash cell utilizing novel Back Bias assisted Band-to-Band tunneling induced Hot-Electron(B4-HE) injection[1]. This paper demonstrates that B4-HE injection programming scheme can be easily evolved to a floating gate cell. By applying a moderate back bias to the cell during programming, the bit-line voltage can be reduced below the supply voltage, 1.8V. As a result, B4-flash can achieves high speed programming comparable to conventional NOR and high programming efficiency comparable to NAND flash at the same time. Basic operations of the floating gate B4-flash cells have been investigated. It is also confirmed that B4-HE injection programming provides very weak temperature dependency in comparison with CHE and FN injection, and does not have a negative impact to its reliability.
AB - A floating gate B4-flash memory cell technology, which provides high speed programming with excellent programming efficiency for NOR architecture, has been developed. We have reported a pchannel SONOS type B4-flash cell utilizing novel Back Bias assisted Band-to-Band tunneling induced Hot-Electron(B4-HE) injection[1]. This paper demonstrates that B4-HE injection programming scheme can be easily evolved to a floating gate cell. By applying a moderate back bias to the cell during programming, the bit-line voltage can be reduced below the supply voltage, 1.8V. As a result, B4-flash can achieves high speed programming comparable to conventional NOR and high programming efficiency comparable to NAND flash at the same time. Basic operations of the floating gate B4-flash cells have been investigated. It is also confirmed that B4-HE injection programming provides very weak temperature dependency in comparison with CHE and FN injection, and does not have a negative impact to its reliability.
UR - http://www.scopus.com/inward/record.url?scp=48649091595&partnerID=8YFLogxK
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U2 - 10.1109/NVSMW.2007.4290568
DO - 10.1109/NVSMW.2007.4290568
M3 - Conference contribution
AN - SCOPUS:48649091595
SN - 1424407532
SN - 9781424407538
T3 - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW
SP - 30
EP - 31
BT - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW
T2 - 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, NVSMW
Y2 - 26 August 2007 through 30 August 2007
ER -