Floating gate memory with biomineralized nanodots embedded in high-κ gate dielectric

Kosuke Ohara; Ichiro Yamashita; Toshitake Yaegashi; Masahiro Moniwa; Masaki Yoshimaru; Yukiharu Uraoka

doi:10.1143/APEX.2.095001

Floating gate memory with biomineralized nanodots embedded in high-κ gate dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO₂ were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO₂ tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO ₂ gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.

Original language	English
Article number	095001
Journal	Applied Physics Express
Volume	2
Issue number	9
DOIs	https://doi.org/10.1143/APEX.2.095001
Publication status	Published - 2009 Sept 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO2 tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO 2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.",

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AU - Ohara, Kosuke

AU - Yamashita, Ichiro

AU - Yaegashi, Toshitake

AU - Moniwa, Masahiro

AU - Yoshimaru, Masaki

AU - Uraoka, Yukiharu

PY - 2009/9/1

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N2 - The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO2 tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO 2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.

AB - The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO2 tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO 2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.

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Floating gate memory with biomineralized nanodots embedded in high-κ gate dielectric

Abstract

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