Floating gate memory with biomineralized nanodots embedded in high-κ gate dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)


    The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO2 tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO 2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.

    Original languageEnglish
    Article number095001
    JournalApplied Physics Express
    Issue number9
    Publication statusPublished - 2009 Sept 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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