The memory properties of a nanodot-type floating gate memory with Co bio-nanodots (Co-BNDs) embedded in HfO2 were investigated. High-density and uniform Co-BNDs were adsorbed on the HfO2 tunnel oxide using ferritin. The fabricated metal oxide semiconductor (MOS) capacitor exhibited a capacitance-voltage (C-V) curve with large hysteresis. The memory window size was 30 times higher than that of the MOS capacitor with a SiO 2 gate oxide. Not only a large memory window but also excellent charge retention and reliability characteristics were obtained for a MOS field-effect transistor (MOSFET). This research confirmed that the proposed memory is promising for use in next-generation memory devices.
|Journal||Applied Physics Express|
|Publication status||Published - 2009 Sept 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)