Floating zone growth of β-Ga2O3: A new window material for optoelectronic device applications

Y. Tomm; J. M. Ko; Akira Yoshikawa; T. Fukuda

doi:10.1016/S0927-0248(00)00196-3

Floating zone growth of β-Ga₂O₃: A new window material for optoelectronic device applications

Y. Tomm, J. M. Ko, Akira Yoshikawa, T. Fukuda

Materials Property Division

Research output: Contribution to journal › Article › peer-review

161 Citations (Scopus)

Abstract

β-Ga₂O₃ is a transparent oxide and intrinsically an insulator. Doping allows the variation of the conductivity for both p- and n-type over a wide range. There are a number of potential applications in optoelectronics such as insulating or conductive window material, or as a substrate. Consequently, the influence of doping on the electrical and optical properties is an issue of crucial importance for pushing this material forward to applications. We report on the successful growth of undoped, Ge- and Ti-doped β-Ga₂O₃ single crystals by the floating zone technique. Both electrical and optical properties were characterized.

Original language	English
Pages (from-to)	369-374
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(00)00196-3
Publication status	Published - 2001 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/S0927-0248(00)00196-3

Cite this

@article{d0333dae66c94e36a1403775694df124,

title = "Floating zone growth of β-Ga2O3: A new window material for optoelectronic device applications",

abstract = "β-Ga2O3 is a transparent oxide and intrinsically an insulator. Doping allows the variation of the conductivity for both p- and n-type over a wide range. There are a number of potential applications in optoelectronics such as insulating or conductive window material, or as a substrate. Consequently, the influence of doping on the electrical and optical properties is an issue of crucial importance for pushing this material forward to applications. We report on the successful growth of undoped, Ge- and Ti-doped β-Ga2O3 single crystals by the floating zone technique. Both electrical and optical properties were characterized.",

author = "Y. Tomm and Ko, {J. M.} and Akira Yoshikawa and T. Fukuda",

year = "2001",

month = jan,

day = "1",

doi = "10.1016/S0927-0248(00)00196-3",

language = "English",

volume = "66",

pages = "369--374",

journal = "Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Floating zone growth of β-Ga2O3

T2 - A new window material for optoelectronic device applications

AU - Tomm, Y.

AU - Ko, J. M.

AU - Yoshikawa, Akira

AU - Fukuda, T.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - β-Ga2O3 is a transparent oxide and intrinsically an insulator. Doping allows the variation of the conductivity for both p- and n-type over a wide range. There are a number of potential applications in optoelectronics such as insulating or conductive window material, or as a substrate. Consequently, the influence of doping on the electrical and optical properties is an issue of crucial importance for pushing this material forward to applications. We report on the successful growth of undoped, Ge- and Ti-doped β-Ga2O3 single crystals by the floating zone technique. Both electrical and optical properties were characterized.

AB - β-Ga2O3 is a transparent oxide and intrinsically an insulator. Doping allows the variation of the conductivity for both p- and n-type over a wide range. There are a number of potential applications in optoelectronics such as insulating or conductive window material, or as a substrate. Consequently, the influence of doping on the electrical and optical properties is an issue of crucial importance for pushing this material forward to applications. We report on the successful growth of undoped, Ge- and Ti-doped β-Ga2O3 single crystals by the floating zone technique. Both electrical and optical properties were characterized.

UR - http://www.scopus.com/inward/record.url?scp=0035254380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035254380&partnerID=8YFLogxK

U2 - 10.1016/S0927-0248(00)00196-3

DO - 10.1016/S0927-0248(00)00196-3

M3 - Article

AN - SCOPUS:0035254380

SN - 0927-0248

VL - 66

SP - 369

EP - 374

JO - Solar Cells

JF - Solar Cells

IS - 1-4

ER -