Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness

Takashi Matsukawa; Kazuhiko Endo; Yuki Ishikawa; Hiromi Yamauchi; Shinichi O'uchi; Yongxun Liu; Junichi Tsukada; Kenichi Ishii; Kunihiro Sakamoto; Eiichi Suzuki; Meishoku Masahara

doi:10.1109/LED.2009.2014180

Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness

Takashi Matsukawa, Kazuhiko Endo, Yuki Ishikawa, Hiromi Yamauchi, Shinichi O'uchi, Yongxun Liu, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Measurement-based analysis of the parasitic resistance (R_para ) of FinFETs was extended to investigation of R_para fluctuation, which could cause severe on-current variation. R_para was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in R_para is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. R_para variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant R_para variation is observed and correlates with the variation of fin thickness.

Original language	English
Pages (from-to)	407-409
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2014180
Publication status	Published - 2009

Keywords

Doping
Extension
FinFET
Fluctuation
Parasitic resistance
Source-drain (S/D)

Access to Document

10.1109/LED.2009.2014180

Cite this

@article{de7f614521c644fe9bc038a11a048afc,

title = "Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness",

abstract = "Measurement-based analysis of the parasitic resistance (Rpara ) of FinFETs was extended to investigation of Rpara fluctuation, which could cause severe on-current variation. Rpara was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in Rpara is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. Rpara variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant Rpara variation is observed and correlates with the variation of fin thickness.",

keywords = "Doping, Extension, FinFET, Fluctuation, Parasitic resistance, Source-drain (S/D)",

author = "Takashi Matsukawa and Kazuhiko Endo and Yuki Ishikawa and Hiromi Yamauchi and Shinichi O'uchi and Yongxun Liu and Junichi Tsukada and Kenichi Ishii and Kunihiro Sakamoto and Eiichi Suzuki and Meishoku Masahara",

note = "Funding Information: Manuscript received December 25, 2008; revised January 16, 2009. First published February 24, 2009; current version published March 25, 2009. This work was supported in part by the Innovative Research Project on Nanoelec-tronics Materials and Structures of METI, Japan. The review of this letter was arranged by Editor X. Zhou.",

year = "2009",

doi = "10.1109/LED.2009.2014180",

language = "English",

volume = "30",

pages = "407--409",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - O'uchi, Shinichi

AU - Liu, Yongxun

AU - Tsukada, Junichi

AU - Ishii, Kenichi

AU - Sakamoto, Kunihiro

AU - Suzuki, Eiichi

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received December 25, 2008; revised January 16, 2009. First published February 24, 2009; current version published March 25, 2009. This work was supported in part by the Innovative Research Project on Nanoelec-tronics Materials and Structures of METI, Japan. The review of this letter was arranged by Editor X. Zhou.

PY - 2009

Y1 - 2009

N2 - Measurement-based analysis of the parasitic resistance (Rpara ) of FinFETs was extended to investigation of Rpara fluctuation, which could cause severe on-current variation. Rpara was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in Rpara is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. Rpara variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant Rpara variation is observed and correlates with the variation of fin thickness.

AB - Measurement-based analysis of the parasitic resistance (Rpara ) of FinFETs was extended to investigation of Rpara fluctuation, which could cause severe on-current variation. Rpara was obtained from the intercept in the linear relationship between measured on-resistance and gate length for FinFETs of various dimensions. A significant increase in Rpara is observed for fin thickness below 25 nm due to dopant loss from the ultrathin extension during processing. Rpara variation was evaluated for 45 FinFETs with an average fin thickness of 16 nm. Significant Rpara variation is observed and correlates with the variation of fin thickness.

KW - Doping

KW - Extension

KW - FinFET

KW - Fluctuation

KW - Parasitic resistance

KW - Source-drain (S/D)

UR - http://www.scopus.com/inward/record.url?scp=67349143366&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349143366&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2014180

DO - 10.1109/LED.2009.2014180

M3 - Article

AN - SCOPUS:67349143366

SN - 0741-3106

VL - 30

SP - 407

EP - 409

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Fluctuation analysis of parasitic resistance in FinFETs with scaled fin thickness

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this