Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

T. Matsukawa; K. Fukuda; Y. X. Liu; K. Endo; J. Tsukada; Y. Ishikawa; H. Yamauchi; S. O'Uchi; S. Migita; W. Mizubayashi; Y. Morita; H. Ota; M. Masahara

doi:10.1109/VLSI-TSA.2014.6839648

Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

T. Matsukawa, K. Fukuda, Y. X. Liu, K. Endo, J. Tsukada, Y. Ishikawa, H. Yamauchi, S. O'Uchi, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.

Original language	English
Title of host publication	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479922178
DOIs	https://doi.org/10.1109/VLSI-TSA.2014.6839648
Publication status	Published - 2014 Jan 1
Externally published	Yes
Event	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan, Province of China Duration: 2014 Apr 28 → 2014 Apr 30

Publication series

Name	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Other

Other	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	14/4/28 → 14/4/30

ASJC Scopus subject areas

Hardware and Architecture
Computer Science Applications

Access to Document

10.1109/VLSI-TSA.2014.6839648

Cite this

Matsukawa, T., Fukuda, K., Liu, Y. X., Endo, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'Uchi, S., Migita, S., Mizubayashi, W., Morita, Y., Ota, H., & Masahara, M. (2014). Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839648] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839648

Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates. / Matsukawa, T.; Fukuda, K.; Liu, Y. X. et al.

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. 6839648 (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsukawa, T, Fukuda, K, Liu, YX, Endo, K, Tsukada, J, Ishikawa, Y, Yamauchi, H, O'Uchi, S, Migita, S, Mizubayashi, W, Morita, Y, Ota, H & Masahara, M 2014, Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates. in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014., 6839648, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, IEEE Computer Society, 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, Hsinchu, Taiwan, Province of China, 14/4/28. https://doi.org/10.1109/VLSI-TSA.2014.6839648

Matsukawa T, Fukuda K, Liu YX, Endo K, Tsukada J, Ishikawa Y et al. Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society. 2014. 6839648. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). doi: 10.1109/VLSI-TSA.2014.6839648

Matsukawa, T. ; Fukuda, K. ; Liu, Y. X. et al. / Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates. Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

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abstract = "Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.",

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AU - Tsukada, J.

AU - Ishikawa, Y.

AU - Yamauchi, H.

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Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

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