TY - JOUR
T1 - Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In,Mn)As layer and (In,Mn)As quantum dots
AU - Ofuchi, H.
AU - Kubo, T.
AU - Tabuchi, M.
AU - Takeda, Y.
AU - Matsukura, F.
AU - Guo, S. P.
AU - Shen, A.
AU - Ohno, H.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures.
AB - We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures.
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U2 - 10.1063/1.1330761
DO - 10.1063/1.1330761
M3 - Article
AN - SCOPUS:0012382710
SN - 0021-8979
VL - 89
SP - 66
EP - 70
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 1
ER -