TY - GEN
T1 - Flux-assisted self-assembly with microbump bonding for 3D heterogeneous integration
AU - Ito, Yuka
AU - Fukushima, Takafumi
AU - Lee, Kang Wook
AU - Choki, Koji
AU - Tanaka, Tetsu
AU - Koyanagi, Mitsumasa
PY - 2013
Y1 - 2013
N2 - We demonstrated a flip-chip self-assembly with Cu/Sn microbump bonding using surface tension of water-soluble fluxes. By using the self-assembly with the fluxes, 3-mm-square chips were aligned to hydrophilic assembly sites defined on a Si substrates in face-down bonding within approximately 2 μm alignment accuracy. The flux-assisted self-assembly can realize not only the precise chip alignment by high surface tension of the water-soluble fluxes, but also the highly reliable bump bonding with Sn solder in a sequence of self-assembly process. Here, we employed several fluxes as liquids for flip-chip self-assembly and compared the resulting alignment accuracies by changing concentrations of the fluxes. In addition, after microbump bonding, we evaluated electrical characteristics. The resulting daisy chains showed good electrical characteristics with contact resistances of 17 MΩ/bump or below without solder bridges and bonding failures.
AB - We demonstrated a flip-chip self-assembly with Cu/Sn microbump bonding using surface tension of water-soluble fluxes. By using the self-assembly with the fluxes, 3-mm-square chips were aligned to hydrophilic assembly sites defined on a Si substrates in face-down bonding within approximately 2 μm alignment accuracy. The flux-assisted self-assembly can realize not only the precise chip alignment by high surface tension of the water-soluble fluxes, but also the highly reliable bump bonding with Sn solder in a sequence of self-assembly process. Here, we employed several fluxes as liquids for flip-chip self-assembly and compared the resulting alignment accuracies by changing concentrations of the fluxes. In addition, after microbump bonding, we evaluated electrical characteristics. The resulting daisy chains showed good electrical characteristics with contact resistances of 17 MΩ/bump or below without solder bridges and bonding failures.
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U2 - 10.1109/ECTC.2013.6575679
DO - 10.1109/ECTC.2013.6575679
M3 - Conference contribution
AN - SCOPUS:84883369058
SN - 9781479902330
T3 - Proceedings - Electronic Components and Technology Conference
SP - 891
EP - 896
BT - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
T2 - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Y2 - 28 May 2013 through 31 May 2013
ER -