TY - JOUR
T1 - Flux pinning properties in BaMO3 (M=Zr,Sn) nanorod-introduced ErBa2 Cu3 Ox films
AU - Awaji, Satoshi
AU - Namba, Masafumi
AU - Watnabe, Kazuo
AU - Ito, Shun
AU - Aoyagi, Eiji
AU - Kai, Hideki
AU - Mukaida, Masashi
AU - Kita, Ryusuke
PY - 2009
Y1 - 2009
N2 - Flux pinning properties on the ErBa2 Ca3 O 7 films with the nanoscaled and columnar-shaped BaMO3 (BMO,M=Zr,Sn) precipitates, i.e., nanorods, were investigated systematically based on the microstructure, critical current density Jc and irreversibility field Bi properties in high magnetic fields. We found that the in-field Jc and Bi increase monotonically with increasing the nanorod density until 3.5 wt % BZO and 6 wt % BSO additions, respectively, although the critical temperature Tc is reduced. According to the flux pinning analysis assuming of the linear summation, the BSO doped samples have the higher performance of the flux pinning than the BZO doped samples quantitatively even after the reduction in the Tc and size of the nanorods. It is considered that those differences originate from the effective pinning length of the nanorods and/or the condensation energy due to the difference of the carrier density.
AB - Flux pinning properties on the ErBa2 Ca3 O 7 films with the nanoscaled and columnar-shaped BaMO3 (BMO,M=Zr,Sn) precipitates, i.e., nanorods, were investigated systematically based on the microstructure, critical current density Jc and irreversibility field Bi properties in high magnetic fields. We found that the in-field Jc and Bi increase monotonically with increasing the nanorod density until 3.5 wt % BZO and 6 wt % BSO additions, respectively, although the critical temperature Tc is reduced. According to the flux pinning analysis assuming of the linear summation, the BSO doped samples have the higher performance of the flux pinning than the BZO doped samples quantitatively even after the reduction in the Tc and size of the nanorods. It is considered that those differences originate from the effective pinning length of the nanorods and/or the condensation energy due to the difference of the carrier density.
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U2 - 10.1063/1.3257260
DO - 10.1063/1.3257260
M3 - Article
AN - SCOPUS:71749120966
SN - 0021-8979
VL - 106
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 10
M1 - 103915
ER -