Focused ion beam lithography with transition metal oxide resists

Nobuyoshi Koshida, Koichi Ohtaka, Masanobu Ando, Masanori Komuro, Nobufumi Atoda

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The microlithographic behavior of inorganic resists for focused ion beam (FIB) has been studied for thin amorphous films of WO3, MoO3, V2O5, a mixture thereof and Ta2O5 using 20∼70 keV Ga+; FIB. The exposure characteristics, composition at the film surfaces and electrical properties have been investigated in order to evaluate the mechanism of the microlithographic behavior. A study of line exposure indicates that the resolution of these resists is determined by the FIB diameter owing to their high contrast. It is also demonstrated that this resist work is directly applicable to fine patterning of W and Mo.

Original languageEnglish
Pages (from-to)2090-2094
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number10 R
Publication statusPublished - 1989 Oct


  • Fine patterning
  • Focused ion beam
  • Inorganic resist
  • Ion beam modification
  • Microlithography
  • Refractory metal
  • Thin amorphous film
  • Transition metal oxide


Dive into the research topics of 'Focused ion beam lithography with transition metal oxide resists'. Together they form a unique fingerprint.

Cite this