Force/displacement detection using quantum effects in InAs/Al 0.5Ga0.5Sb two-dimensional electron systems

H. Yamaguchi; S. Miyashita; Y. Hirayama

Force/displacement detection using quantum effects in InAs/Al _0.5Ga_0.5Sb two-dimensional electron systems

H. Yamaguchi, S. Miyashita, Y. Hirayama

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated micromechanical piezoresistive InAs/Al _0.5Ga_0.5Sb cantilevers and the piezoresitace was measured at liquid helium temperature under a magnetic field. Depending on the electron mobility of the InAs films, we observed conductance fluctuation and Schbnikov-de Haas oscillation, which was caused by the quantum effects, in the piezoresistance. At appropriately choosing the magnetic field, we obtained enhanced force and displacement sensitivity of 10^-12N/√Hz and 10^-11 m/√Hz, respectively.

Original language	English
Pages (from-to)	187-192
Number of pages	6
Journal	Institute of Physics Conference Series
Volume	184
Publication status	Published - 2005 Dec 1
Externally published	Yes
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 2004 Sept 12 → 2004 Dec 16

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

@article{d27d991af97641d39e9db89a6488f5c1,

title = "Force/displacement detection using quantum effects in InAs/Al 0.5Ga0.5Sb two-dimensional electron systems",

abstract = "We have fabricated micromechanical piezoresistive InAs/Al 0.5Ga0.5Sb cantilevers and the piezoresitace was measured at liquid helium temperature under a magnetic field. Depending on the electron mobility of the InAs films, we observed conductance fluctuation and Schbnikov-de Haas oscillation, which was caused by the quantum effects, in the piezoresistance. At appropriately choosing the magnetic field, we obtained enhanced force and displacement sensitivity of 10-12N/√Hz and 10-11 m/√Hz, respectively.",

author = "H. Yamaguchi and S. Miyashita and Y. Hirayama",

year = "2005",

month = dec,

day = "1",

language = "English",

volume = "184",

pages = "187--192",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

}

TY - JOUR

T1 - Force/displacement detection using quantum effects in InAs/Al 0.5Ga0.5Sb two-dimensional electron systems

AU - Yamaguchi, H.

AU - Miyashita, S.

AU - Hirayama, Y.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We have fabricated micromechanical piezoresistive InAs/Al 0.5Ga0.5Sb cantilevers and the piezoresitace was measured at liquid helium temperature under a magnetic field. Depending on the electron mobility of the InAs films, we observed conductance fluctuation and Schbnikov-de Haas oscillation, which was caused by the quantum effects, in the piezoresistance. At appropriately choosing the magnetic field, we obtained enhanced force and displacement sensitivity of 10-12N/√Hz and 10-11 m/√Hz, respectively.

AB - We have fabricated micromechanical piezoresistive InAs/Al 0.5Ga0.5Sb cantilevers and the piezoresitace was measured at liquid helium temperature under a magnetic field. Depending on the electron mobility of the InAs films, we observed conductance fluctuation and Schbnikov-de Haas oscillation, which was caused by the quantum effects, in the piezoresistance. At appropriately choosing the magnetic field, we obtained enhanced force and displacement sensitivity of 10-12N/√Hz and 10-11 m/√Hz, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33644544382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644544382&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33644544382

SN - 0951-3248

VL - 184

SP - 187

EP - 192

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Force/displacement detection using quantum effects in InAs/Al _0.5Ga_0.5Sb two-dimensional electron systems

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this