We have fabricated micromechanical piezoresistive InAs/Al 0.5Ga0.5Sb cantilevers and the piezoresitace was measured at liquid helium temperature under a magnetic field. Depending on the electron mobility of the InAs films, we observed conductance fluctuation and Schbnikov-de Haas oscillation, which was caused by the quantum effects, in the piezoresistance. At appropriately choosing the magnetic field, we obtained enhanced force and displacement sensitivity of 10-12N/√Hz and 10-11 m/√Hz, respectively.
|Number of pages||6|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2005 Dec 1|
|Event||31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of|
Duration: 2004 Sept 12 → 2004 Dec 16
ASJC Scopus subject areas
- Physics and Astronomy(all)