Formation and evolution of strain-induced self-assembled dot

Takashi Hanada; Takafumi Yao

doi:10.1016/j.mejo.2005.02.009

Formation and evolution of strain-induced self-assembled dot

Takashi Hanada, Takafumi Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Diffusion length of adatoms on surface during epitaxy is finite and strongly depends on growth temperature and growth rate. Formation and development process of InAs/GaAs(001) self-assembled dot is studied by minimizing strain plus surface energy of a dot, wetting layer, and substrate system within a finite area limited by the surface diffusion.

Original language	English
Pages (from-to)	216-218
Number of pages	3
Journal	Microelectronics Journal
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.009
Publication status	Published - 2005 Mar 1

Keywords

Diffusion length
Energetics
Lattice misfit
Self-assembled dot

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mejo.2005.02.009

Cite this

@article{6bbeda3ea60f46b68e08322dd7a6547c,

title = "Formation and evolution of strain-induced self-assembled dot",

abstract = "Diffusion length of adatoms on surface during epitaxy is finite and strongly depends on growth temperature and growth rate. Formation and development process of InAs/GaAs(001) self-assembled dot is studied by minimizing strain plus surface energy of a dot, wetting layer, and substrate system within a finite area limited by the surface diffusion.",

keywords = "Diffusion length, Energetics, Lattice misfit, Self-assembled dot",

author = "Takashi Hanada and Takafumi Yao",

year = "2005",

month = mar,

day = "1",

doi = "10.1016/j.mejo.2005.02.009",

language = "English",

volume = "36",

pages = "216--218",

journal = "Microelectronics",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "3-6",

}

TY - JOUR

T1 - Formation and evolution of strain-induced self-assembled dot

AU - Hanada, Takashi

AU - Yao, Takafumi

PY - 2005/3/1

Y1 - 2005/3/1

N2 - Diffusion length of adatoms on surface during epitaxy is finite and strongly depends on growth temperature and growth rate. Formation and development process of InAs/GaAs(001) self-assembled dot is studied by minimizing strain plus surface energy of a dot, wetting layer, and substrate system within a finite area limited by the surface diffusion.

AB - Diffusion length of adatoms on surface during epitaxy is finite and strongly depends on growth temperature and growth rate. Formation and development process of InAs/GaAs(001) self-assembled dot is studied by minimizing strain plus surface energy of a dot, wetting layer, and substrate system within a finite area limited by the surface diffusion.

KW - Diffusion length

KW - Energetics

KW - Lattice misfit

KW - Self-assembled dot

UR - http://www.scopus.com/inward/record.url?scp=33644529732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644529732&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.009

DO - 10.1016/j.mejo.2005.02.009

M3 - Conference article

AN - SCOPUS:33644529732

SN - 0026-2692

VL - 36

SP - 216

EP - 218

JO - Microelectronics

JF - Microelectronics

IS - 3-6

ER -

Formation and evolution of strain-induced self-assembled dot

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this