Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy

K. Godo; J. H. Chang; H. Makino; T. Hanada; H. Goto; T. Yao; T. Goto

doi:10.1002/pssc.200303058

Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy

K. Godo, J. H. Chang, H. Makino, T. Hanada, H. Goto, T. Yao, T. Goto

IMR - Materials Design Division

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We study the growth and optical properties of Cr-doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In-situ reflection high-energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr-doped CdTe quantum dots (QDs). After 4.5 ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two-dimensional growth mode is terminated and the CdTe layer grows in a three-dimensional mode. Low temperature photoluminescence spectra of Cr-doped CdTe QDs (T_cr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.

Original language	English
Pages (from-to)	1242-1245
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	4
DOIs	https://doi.org/10.1002/pssc.200303058
Publication status	Published - 2003
Event	2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: 2002 Sept 30 → 2002 Oct 3

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title = "Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy",

abstract = "We study the growth and optical properties of Cr-doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In-situ reflection high-energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr-doped CdTe quantum dots (QDs). After 4.5 ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two-dimensional growth mode is terminated and the CdTe layer grows in a three-dimensional mode. Low temperature photoluminescence spectra of Cr-doped CdTe QDs (Tcr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.",

author = "K. Godo and Chang, {J. H.} and H. Makino and T. Hanada and H. Goto and T. Yao and T. Goto",

year = "2003",

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language = "English",

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journal = "Physica Status Solidi C: Conferences",

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note = "2nd International Conference on Semiconductor Quantum Dots, QD 2002 ; Conference date: 30-09-2002 Through 03-10-2002",

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TY - JOUR

T1 - Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy

AU - Godo, K.

AU - Chang, J. H.

AU - Makino, H.

AU - Hanada, T.

AU - Goto, H.

AU - Yao, T.

AU - Goto, T.

PY - 2003

Y1 - 2003

N2 - We study the growth and optical properties of Cr-doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In-situ reflection high-energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr-doped CdTe quantum dots (QDs). After 4.5 ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two-dimensional growth mode is terminated and the CdTe layer grows in a three-dimensional mode. Low temperature photoluminescence spectra of Cr-doped CdTe QDs (Tcr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.

AB - We study the growth and optical properties of Cr-doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In-situ reflection high-energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr-doped CdTe quantum dots (QDs). After 4.5 ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two-dimensional growth mode is terminated and the CdTe layer grows in a three-dimensional mode. Low temperature photoluminescence spectra of Cr-doped CdTe QDs (Tcr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 2nd International Conference on Semiconductor Quantum Dots, QD 2002

Y2 - 30 September 2002 through 3 October 2002

ER -

Formation and optical properties of Cr-doped CdTe/ZnTe nanostructures on ZnTe substrates by molecular beam epitaxy

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