TY - JOUR
T1 - Formation mechanism of a faceted interface
T2 - In situ observation of the Si(100) crystal-melt interface during crystal growth
AU - Tokairin, M.
AU - Fujiwara, K.
AU - Kutsukake, K.
AU - Usami, N.
AU - Nakajima, K.
PY - 2009/11/12
Y1 - 2009/11/12
N2 - We investigated the formation mechanism of a faceted crystal-melt interface by in situ observation. It was directly proved that a wavy perturbation is introduced into a planar crystal-melt interface and the perturbation results in zigzag facets. Such a facet formation process was observed when growth velocity was high, although planar interfaces were maintained at low growth velocities. It was shown by theoretical analysis that the negative temperature gradient generated by the latent heat of crystallization at high growth velocities amplifies the perturbation and leads to the facet formation.
AB - We investigated the formation mechanism of a faceted crystal-melt interface by in situ observation. It was directly proved that a wavy perturbation is introduced into a planar crystal-melt interface and the perturbation results in zigzag facets. Such a facet formation process was observed when growth velocity was high, although planar interfaces were maintained at low growth velocities. It was shown by theoretical analysis that the negative temperature gradient generated by the latent heat of crystallization at high growth velocities amplifies the perturbation and leads to the facet formation.
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U2 - 10.1103/PhysRevB.80.174108
DO - 10.1103/PhysRevB.80.174108
M3 - Article
AN - SCOPUS:72849117455
SN - 1098-0121
VL - 80
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 17
M1 - 174108
ER -