Formation of high quality epitaxial layer for an improved GTO

M. Watanabe; Y. Takahashi; O. Yamada; S. Tagami; H. Kirihata

doi:10.1109/ISPSD.1992.991244

Formation of high quality epitaxial layer for an improved GTO

M. Watanabe, Y. Takahashi, O. Yamada, S. Tagami, H. Kirihata

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a high quality epitaxial layer formation on boron diffused layer in FZ-silicon. This epitaxial layer has been successfully applied to obtaining a high reverse gate voltage of GTO. The test-sample GTO having a high reverse gate voltage of 100V is demonstrated to realize high peak turn off current and short turn-off time.

Original language	English
Article number	991244
Pages (from-to)	98-103
Number of pages	6
Journal	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	1992-May
DOIs	https://doi.org/10.1109/ISPSD.1992.991244
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	4th International Symposium on Power Semiconductor Devices and Ics, ISPSD 1992 - Tokyo, Japan Duration: 1992 May 19 → 1992 May 21

ASJC Scopus subject areas

Engineering(all)

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10.1109/ISPSD.1992.991244

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title = "Formation of high quality epitaxial layer for an improved GTO",

abstract = "We present a high quality epitaxial layer formation on boron diffused layer in FZ-silicon. This epitaxial layer has been successfully applied to obtaining a high reverse gate voltage of GTO. The test-sample GTO having a high reverse gate voltage of 100V is demonstrated to realize high peak turn off current and short turn-off time.",

author = "M. Watanabe and Y. Takahashi and O. Yamada and S. Tagami and H. Kirihata",

year = "1992",

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doi = "10.1109/ISPSD.1992.991244",

language = "English",

volume = "1992-May",

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journal = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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note = "4th International Symposium on Power Semiconductor Devices and Ics, ISPSD 1992 ; Conference date: 19-05-1992 Through 21-05-1992",

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TY - JOUR

T1 - Formation of high quality epitaxial layer for an improved GTO

AU - Watanabe, M.

AU - Takahashi, Y.

AU - Yamada, O.

AU - Tagami, S.

AU - Kirihata, H.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We present a high quality epitaxial layer formation on boron diffused layer in FZ-silicon. This epitaxial layer has been successfully applied to obtaining a high reverse gate voltage of GTO. The test-sample GTO having a high reverse gate voltage of 100V is demonstrated to realize high peak turn off current and short turn-off time.

AB - We present a high quality epitaxial layer formation on boron diffused layer in FZ-silicon. This epitaxial layer has been successfully applied to obtaining a high reverse gate voltage of GTO. The test-sample GTO having a high reverse gate voltage of 100V is demonstrated to realize high peak turn off current and short turn-off time.

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U2 - 10.1109/ISPSD.1992.991244

DO - 10.1109/ISPSD.1992.991244

M3 - Conference article

AN - SCOPUS:85067653588

SN - 1063-6854

VL - 1992-May

SP - 98

EP - 103

JO - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

JF - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

M1 - 991244

T2 - 4th International Symposium on Power Semiconductor Devices and Ics, ISPSD 1992

Y2 - 19 May 1992 through 21 May 1992

ER -

Formation of high quality epitaxial layer for an improved GTO

Abstract

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