TY - JOUR
T1 - Formation of indium-tin oxide ohmic contacts for β-Ga2O3
AU - Oshima, Takayoshi
AU - Wakabayashi, Ryo
AU - Hattori, Mai
AU - Hashiguchi, Akihiro
AU - Kawano, Naoto
AU - Sasaki, Kohei
AU - Masui, Takekazu
AU - Kuramata, Akito
AU - Yamakoshi, Shigenobu
AU - Yoshimatsu, Kohei
AU - Ohtomo, Akira
AU - Oishi, Toshiyuki
AU - Kasu, Makoto
N1 - Funding Information:
The authors would like to thank H. Kawanowa (Ion Technology Center Co., Ltd.) for valuable discussions regarding TEM and EDS analyses. This work was supported by JSPS Grants-in-Aid for Scientific Research (Nos. 26709020 and 16K13673) and a research grant from the JGC-S Scholarship foundation.
Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/12
Y1 - 2016/12
N2 - Sputter-deposited indium-tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga2O3(010) substrates with a carrier concentration of 2 × 1017 cm-3 after rapid thermal annealing in a wide range of annealing temperatures of 900-1150 °C. The formation of an ohmic contact is attributed to interdiffusion between ITO and β-Ga2O3, as evidenced by the results of transmission electron microscopy and energydispersive X-ray spectroscopy. The interdiffusion decreases the band gap and increases the donor concentration of β-Ga2O3 at the interface, and forms an intermediate semiconductor layer desirable for carrier transport. The ITO ohmic contact is particularly useful for future β-Ga2O3 devices operated at high temperatures.
AB - Sputter-deposited indium-tin oxide (ITO) electrodes became ohmic contacts for unintentionally doped β-Ga2O3(010) substrates with a carrier concentration of 2 × 1017 cm-3 after rapid thermal annealing in a wide range of annealing temperatures of 900-1150 °C. The formation of an ohmic contact is attributed to interdiffusion between ITO and β-Ga2O3, as evidenced by the results of transmission electron microscopy and energydispersive X-ray spectroscopy. The interdiffusion decreases the band gap and increases the donor concentration of β-Ga2O3 at the interface, and forms an intermediate semiconductor layer desirable for carrier transport. The ITO ohmic contact is particularly useful for future β-Ga2O3 devices operated at high temperatures.
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U2 - 10.7567/JJAP.55.1202B7
DO - 10.7567/JJAP.55.1202B7
M3 - Article
AN - SCOPUS:84999861289
SN - 0021-4922
VL - 55
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 12
M1 - 1202B7
ER -