Abstract
The laser chemical vapor deposition (CVD) using dichloromethyl phenylsilane as a monomer gave a polysilane film on a substrate. The micropatterns of the polysilane with the resolution of about 300 μm were formed by laser projection CVD through a photomask. The silylene was observed by laser flash photolysis of dichloromethyl phenylsilane as a transient intermediate during the photochemical reaction. The transient absorption spectrum and the molecular orbital (MO) calculation suggest the formation of the methylphenylsilylene by the cleavage of the Si-Cl bond of the dichloromethylphenylsilane. The elemental composition by XPS spectra showed the higher Si:C ratio of the polysilane film compared to the monomer, which implies the existence of the silicon network structure. The time-resolved emission spectra of the polysilane film were similar to that of the network polysilane. The optical band gap of polysilane film was decreased with increasing laser excitation power.
| Original language | English |
|---|---|
| Pages (from-to) | 123-129 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 312 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1998 Jan 14 |
Keywords
- Chemical vapor deposition (CVD)
- Fluorescence
- Laser CVD
- Laser projection CVD
- Micropatterning
- Optical properties
- Polysilane
- Silane
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry