Formation of polysilane film by laser CVD

Akira Watanabe, Takashi Kawato, Minoru Matsuda, Mamoru Fujitsuka, Osamu Ito

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The laser chemical vapor deposition (CVD) using dichloromethyl phenylsilane as a monomer gave a polysilane film on a substrate. The micropatterns of the polysilane with the resolution of about 300 μm were formed by laser projection CVD through a photomask. The silylene was observed by laser flash photolysis of dichloromethyl phenylsilane as a transient intermediate during the photochemical reaction. The transient absorption spectrum and the molecular orbital (MO) calculation suggest the formation of the methylphenylsilylene by the cleavage of the Si-Cl bond of the dichloromethylphenylsilane. The elemental composition by XPS spectra showed the higher Si:C ratio of the polysilane film compared to the monomer, which implies the existence of the silicon network structure. The time-resolved emission spectra of the polysilane film were similar to that of the network polysilane. The optical band gap of polysilane film was decreased with increasing laser excitation power.

Original languageEnglish
Pages (from-to)123-129
Number of pages7
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1998 Jan 14


  • Chemical vapor deposition (CVD)
  • Fluorescence
  • Laser CVD
  • Laser projection CVD
  • Micropatterning
  • Optical properties
  • Polysilane
  • Silane

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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