@article{3d5b7d8dd8c74e63b296dd386d85efac,
title = "Formation of quantum dots in GaN/AlGaN FETs",
abstract = "GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.",
author = "Tomohiro Otsuka and Takaya Abe and Takahito Kitada and Norikazu Ito and Taketoshi Tanaka and Ken Nakahara",
note = "Funding Information: We thank Takeshi Kumasaka for fruitful discussions and technical supports. Part of this work is supported by ROHM Collaboration Project, PRESTO (JPMJPR16N3), JST, MEXT Leading Initiative for Excellent Young Researchers, Futaba Electronics Memorial Foundation Research Grant, The Mikiya Science and Technology Foundation Research Grant, Harmonic Ito Foundation Research Grant, Takahashi Industrial and Economic Research Foundation Research Grant, The Murata Science Foundation Research Grant, Samco Foundation Research Grant, Casio Science Promotion Foundation Research Grant and The Thermal & Electric Energy Technology Foundation Research Grant. Publisher Copyright: {\textcopyright} 2020, The Author(s).",
year = "2020",
month = dec,
day = "1",
doi = "10.1038/s41598-020-72269-z",
language = "English",
volume = "10",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",
}